FNK3205

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK3205 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK3205/55H12 General Features ● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package FNK3205 FNK3205 TO-220-3L Reel Size - Tape width - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Dr...