Power MOSFET. FNK6050 Datasheet

FNK6050 MOSFET. Datasheet pdf. Equivalent

Part FNK6050
Description N-Channel Power MOSFET
Feature FNK N-Channel Enhancement Mode Power MOSFET FNK6050 Description The FNK6050 uses advanced trench t.
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FNK6050
FNK N-Channel Enhancement Mode Power MOSFET
FNK6050
Description
The FNK6050 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =60V,ID =50A
RDS(ON) <20m@ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
6050
FNK6050
TO-220
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 5)
EAS
Limit
60
±20
50
35
200
80
0.53
51
Quantity
-
Unit
V
V
A
A
A
W
W/
mJ
FNK-Semiconductor
1/7
Oct.2016.Rev.1.0



FNK6050
FNK6050
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
TJ,TSTG
RθJC
-55 To 175
1.88
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
Forward Transconductance
gFS VDS=25V,ID=20A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tf
Qg
Qgs
VDS=30V,ID=50A,
VGS=10V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=40A
Diode Forward Current (Note 2)
IS
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = 40A
Qrr di/dt = 100A/μs(Note3)
Min Typ Max
60 71
-
--
1
- - ±100
1.2 1.8
- 17
24 -
2.5
20
-
- 810
- 120
- 80
-
-
-
- 25
-5
- 50
-6
- 30
- 10
-5
-
-
-
-
- 1.2
- - 50
- 50
-
- 100
-
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Oct.2016.Rev.1.0





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