FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK6075
General Features
● VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V
(Typ:7.5? mΩ)
● High density cell design for ultra low Rdson ● Fully char...
