N-Channel Trench Power MOSFET
General Description
The FNK01N08 is N-channel MOS Field Effect Transistor designed for hig...
N-Channel Trench Power MOSFET
General Description
The FNK01N08 is N-channel MOS Field Effect
Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Features
● VDS=100V; ID=100A@ VGS=10V; RDS(ON)<9.3mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● 72V E-Bike controller applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
FNK01N08
To-220 Top View
Schematic Diagram
VDS = 100V ID= 100A RDS(ON)= 7.7mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK01N08
FNK01N08
TO-220
Reel Size -
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC) IDM (pluse)
Drain...
