Power MOSFET. FNK3416 Datasheet

FNK3416 MOSFET. Datasheet pdf. Equivalent


Part FNK3416
Description N-Channel Power MOSFET
Feature FNK3416 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK3416 uses advanced trench te.
Manufacture FNK
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FNK3416 FNK N-Channel Enhancement Mode Power MOSFET Descrip FNK3416 Datasheet
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FNK3416
FNK3416
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK3416 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
VDS = 20V,ID =6A
RDS(ON) < 28m@ VGS=2.5V
RDS(ON) <22m@ VGS=4.5V
ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired
Surface mount package
Schematic diagram
Marking and pin assignment
Application
PWM application
Load switch
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3416
FNK3416
SOT-23
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
6
24
1.4
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
89.3 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Min Typ Max Unit
20 - V
- - 1 μA
FNK-Semiconductor
1/7
Jan.2017.Rev.1.0



FNK3416
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=±10V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
VDS=5V,ID=4.5A
VDS=10V,VGS=0V,
F=1.0MHz
VDD=10V,RL=1. 5
VGS=5V,RGEN=3
VDS=10V,ID=6A,
VGS=4.5V
VGS=0V,IS=1A
FNK3416
- - ±10 μA
0.45 0.7
- 13
- 16
8-
1.0
22
28
-
V
m
m
S
- 660
- 160
- 87
-
-
-
PF
PF
PF
- 0.5
-1
- 12
-4
-8
- 2.5
-3
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
6
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
FNK-Semiconductor
2/7
Jan.2017.Rev.1.0





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