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FNK5515PD Dataheets PDF



Part Number FNK5515PD
Manufacturers FNK
Logo FNK
Description P-Channel Power MOSFET
Datasheet FNK5515PD DatasheetFNK5515PD Datasheet (PDF)

FNK5515PD FNK P-Channel Enhancement Mode Power MOSFET Description The FNK55P15PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-55V,ID =-15A RDS(ON) <75mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● H.

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FNK5515PD FNK P-Channel Enhancement Mode Power MOSFET Description The FNK55P15PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-55V,ID =-15A RDS(ON) <75mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC Converter TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package FNK5515PD FNK5515PD TO-252 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipa.


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