Document
FNK5515PD
FNK P-Channel Enhancement Mode Power MOSFET
Description
The FNK55P15PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =-55V,ID =-15A RDS(ON) <75mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● DC-DC Converter
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK5515PD
FNK5515PD
TO-252
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipa.