FNK3035P
FNK P-Channel Enhancement Mode Power MOSFET
Description
TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =-30V, ID=-35A
R DS(ON) < 10 mΩ @ VGS=-10V
D G
S Schematic diagram
● High density cell design for ultra low Rdson...
