Power MOSFET. FNK1404 Datasheet

FNK1404 MOSFET. Datasheet pdf. Equivalent

Part FNK1404
Description N-Channel Power MOSFET
Feature FNK N-Channel Power MOSFET FNK1404 Description The FNK1404 uses advanced trench technology and des.
Manufacture FNK
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FNK1404
FNK N-Channel Power MOSFET
FNK1404
Description
The FNK1404 uses advanced trench technology and
design to provide excellent Rds(on) with low gate charge.
It can be used in a wide variety of applications.
General Features
VDS =45V ,ID =205A
Rds(on) <4mΩ @ Vgs=10V (Typ:2.8mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
E-Tools
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Package Marking and Ordering Information
Device Marking
Device Package
FNK1404
TO-220
Form
Tube
Absolute Maximum Ratings
Symbol
Parameter
Vds Drain-Source Voltage
Vgs Gate-Source Voltage
Id (25)
Drain Current-Continuous (Tc = 25)
Id (100)
Drain Current-Continuous (Tc = 100)
Idm Pulsed Drain Current (Note 1,3)
Pd Maximum Power Dissipation
EAS Single pulse avalanche energy (Note 5)
Tj Operating Junction and Storage Temperature Range
RθJC Thermal Resistance,Junction-to-Case (Note 2)
RθJA Thermal Resistance,Junction-to-Ambient
Schematic diagram
To-220 Top View
Minimum Quantity
1000
Max.
45
±20
205
140
820
300
1010
-55175
0.5
65
Unit
V
V
A
A
A
W
mJ
/W
/W
FNK-Semiconductor
1/6
Nov.2016.Rev.1.0



FNK1404
FNK1404
IDSS
Zero Gate Voltage Drain Current
一 一 5 uA VGS=0V,VDS=VDS
IGSS Gate-Body Leakage Current 一 一 ±100 nA VGS=±20V,VDS=0V
On Characteristics
VGS(th)
Gate Threshold Voltage
2.5 3.0 3.5 V VDS=VGS,ID=250μA
RDS(ON)@10 Drain-Source On-State Resistance 2.8 4.2 mΩ VGS=10V, ID=Id/4
gfs Forward Transconductance
78 S VDS=VDS/2,ID=Id/4
Dynamic Characteristics (Note4)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
8120
1370
910
pF VDS=VDS/2
pF VGS=0V
pF F=1.0MHz
Switching Characteristics (Note 4)
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
19
206
53
38
nS
VDS=VDS*0.75
nS ID=Id/2
nS RG=2.5Ω
VGS=10V
nS
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
135 200 nC ID=Id/2
40 65 nC VDS=VDS*0.75
42 71 nC VGS=10V
Rg Gate-Drain Charge
2.1 2.8 3.5 Ω F=1MHz, open drain
Drain-Source Diode Characteristics
VSD
Diode Forward Voltage (Note 3)
0.65 1
V IS=Id/2,VGS=0V
Trr Reverse Recovery Time
Qrr Reverse Recovery Charge
85 125 nS IF=Id/2,VR=VDS*0.75
173 240 nC di/dt = 100A/μs
Ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
.Repetitive Rating: Pulse width limited by maximum junction temperature.
.Surface Mounted on FR4 Board, t 10 sec.
.Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
. Guaranteed by design, not subject to production
. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω
FNK-Semiconductor
2/6
Nov.2016.Rev.1.0





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