N-Channel Power MOSFET
60V N-Channel MOSFET
Description
The FNK 3206 uses advanced trench technology and design to provide excellent RDS(ON) wi...
Description
60V N-Channel MOSFET
Description
The FNK 3206 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
Features
● VDS=60V; ID=210A@ VGS=10V; RDS(ON)< 3 mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
FNK3206
D
G S
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
To-220 Top View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.3mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipati...
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