Power MOSFET. FNK3206 Datasheet

FNK3206 MOSFET. Datasheet pdf. Equivalent


Part FNK3206
Description N-Channel Power MOSFET
Feature 60V N-Channel MOSFET Description The FNK 3206 uses advanced trench technology and design to provide .
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60V N-Channel MOSFET Description The FNK 3206 uses advanced FNK3206 Datasheet
60V N-Channel MOSFET Description The FNK 3206T uses advanced FNK3206T Datasheet
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FNK3206
60V N-Channel MOSFET
Description
The FNK 3206 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in automotive applications and a wide variety of other
applications.
Features
VDS=60V; ID=210A@ VGS=10V;
RDS(ON)< 3 mΩ @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
FNK3206
D
G
S
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
To-220 Top View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.3mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
210
160
840
18
15
108
874
333
167
1.9
1.2
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
54
0.35
Max
15
65
0.45
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
FNK-Semiconductor
1/8
Nov.2016.Rev.1.0



FNK3206
FNK3206
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
Min
ID=250µA, VGS=0V
VDS=60V, VGS=0V
VDS=0V, VGS= ±25V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
60
TJ=55°C
2.2
540
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
C Input Capacitance
C Output Capacitance
C Reverse Transfer Capacitance
R Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
85
24
27
20
190
Typ Max Units
V
1
5 µA
100 nA
2.9 4
V
A
2.2 3
m
2.8 4
60 S
0.67 1
180
V
A
7750
1370
900
1.37
pF
pF
pF
108 130
30 36
46 65
31
29
41
13
35 50
273 355
nC
nC
nC
ns
ns
ns
ns
ns
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/8
Nov.2016.Rev.1.0





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