Power MOSFET. FNK60N60 Datasheet

FNK60N60 MOSFET. Datasheet pdf. Equivalent

Part FNK60N60
Description N-Channel Power MOSFET
Feature FNK60N60 FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK60N60 uses advanced trench t.
Manufacture FNK
Datasheet
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FNK60N60 FNK N-Channel Enhancement Mode Power MOSFET Descri FNK60N60 Datasheet
FNK60N60AD FNK N-Channel Enhancement Mode Power MOSFET Desc FNK60N60AD Datasheet
FNK60N60D FNK N-Channel Enhancement Mode Power MOSFET Descr FNK60N60D Datasheet
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FNK60N60
FNK60N60
FNK N-Channel Enhancement Mode Power MOSFET
Description
TheFNK60N60 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 60V,ID =60A
RDS(ON) < 11m@ VGS=10V
(Typ:8.0m )
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Schematic diagram
Application
Power switching application
Hard switched and High frequency circuits
Uninterruptible power supply
To-220 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK60N60
FNK60N60
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
60
±20
60
42
240
85
Unit
V
V
A
A
A
W
FNK-Semiconductor
1/7
Nov.2016.Rev.1.0



FNK60N60
Derating factor
Parameter
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
Symbol
EAS
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=30A
VDS=10V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V, RL=1
VGS=10V,RGEN=3
VDS=30V,ID=30A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=20A
IS -
trr TJ = 25°C, IF =10A
Qrr di/dt = 100A/μs(Note3)
FNK60N60
0.57
Limit
50
-55 To 175
W/
Unit
mJ
2 /W
Min Typ Max Unit
60 - V
- - 1 μA
- - ±100 nA
2 2.8
- 8.0
20 -
4
11
-
V
m
S
- 2040
- 240
- 165
-
-
-
PF
PF
PF
- 15
- 35
- 44
- 23
- 45
- 10
- 15
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
- - 60
- 53
-
- 51
-
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Nov.2016.Rev.1.0





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