FNK22001AF

FNK22001AF FNK N-Channel Enhancement Mode Power MOSFET Description The FNK22001AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =180A RDS(ON) <3.7mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK22001AF FNK22001AF TO-220 Reel Size - Tape width - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous...