Power MOSFET. FNK75N08BD Datasheet

FNK75N08BD MOSFET. Datasheet pdf. Equivalent

Part FNK75N08BD
Description N-Channel Power MOSFET
Feature FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK75N08BD uses advanced trench technolog.
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FNK N-Channel Enhancement Mode Power MOSFET Description TheF FNK75N08BD Datasheet
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FNK75N08BD
FNK N-Channel Enhancement Mode Power MOSFET
Description
TheFNK75N08BD uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
FNK75N08BD
General Features
VDS =80V,ID =110A
RDS(ON) < 7m@ VGS=10V
(Typ:5.7m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
To-263 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK75N08BD FNK75N08BD
TO-263
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
80
±20
110
88
440
180
1.2
218
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
FNK-Semiconductor
1/7
Nov.2016.Rev.1.0



FNK75N08BD
FNK75N08BD
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.83 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=80V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=25V,ID=40A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15,
RG=2.5,VGS=10V
ID=30A,VDD=30V,VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=40A
IS
trr TJ = 25°C, IF = 40A
Qrr di/dt = 100A/μs(Note3)
Min
80
-
-
2
-
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
5.7
-
3320
460
290
20
19
70
30
125
24
49
0.85
-
37
58
Max
-
1
±100
4
7
-
-
-
-
-
-
-
-
-
-
-
1.2
98
-
-
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Nov.2016.Rev.1.0





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