FNK75N08BD

FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK75N08BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK75N08BD General Features ● VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.7mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply To-263 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK75N08BD FNK75N08BD TO-263 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage ...