FNK01N01D

100V N-Channel MOSFET The FNK10N01D have been fabricated using the advanced MOSTMhigh voltage process that is designed to deliver high levels of performance and robustness in switching application By providing low R ,DS(on) Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power designs. FNK01N01D D G S General Features ● VDS = 100V,ID =100A RDS(ON) < 213mΩ @ VGS=10V (Typ:200m Ω) TO-251S top view Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current TA=25°C TA=70°C IDSM Maximum 100 ±20 100 65 340 16 12 Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range EAS, EAR PD PDSM TJ, TSTG Thermal Characteristics Parameter Maximum Junction-t...