FNK04N04

FNK04N04 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK04N 04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =90A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.2m Ω) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment Top View Bottom View DFN5X6 Package Marking and Ordering Information Device Marking Device Device Package FNK04N04 FNK04N04 DFN5*6 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Dr...