Document
FNK N-Channel Enhancement Mode Power MOSFET
FNK01N15T
Description
The FNK01N15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =100V,ID =150A RDS(ON) <5.7mΩ @ VGS=10V
(Typ:5.0? mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Load switching ● Uninterruptible power supply
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK01N15T FNK01N15T
TO-247
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100.