SJMOS N-MOSFET. SKJD850N65 Datasheet

SKJD850N65 N-MOSFET. Datasheet pdf. Equivalent

Part SKJD850N65
Description SJMOS N-MOSFET
Feature SKJF(H&D)850N65 SJMOS N-MOSFET 650V, 0.73Ω, 5A Features • Skysilicon Super_Junction Gen1 technology.
Manufacture SKYSILICON
Datasheet
Download SKJD850N65 Datasheet

SKJF(H&D)850N65 SJMOS N-MOSFET 650V, 0.73Ω, 5A Features • S SKJD850N65 Datasheet
Recommendation Recommendation Datasheet SKJD850N65 Datasheet




SKJD850N65
SKJF(H&D)850N65
SJMOS N-MOSFET 650V, 0.73Ω, 5A
Features
• Skysilicon Super_Junction Gen1 technology
• Much lower Ron*A performance for On-state efficiency
• Much lower FOM for fast switching efficiency
Applications
• LED/LCD/PDP TV and monitor Lighting
• Solar/Renewable/UPS-Micro Inverter System
• Charger
• Power Supply
Product Summary
VDS
RDS(on)_typ
ID
650V
0.73Ω
5A
100% Avalanche Tested
Package Marking and Ordering Information
Part #
SKJF(H&D)850N65
Marking
-
Package Packing
TO-220
Tube
Reel Size
N/A
Tape Width
N/A
Qty
50pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
TC = 25°C
TC = 100°C
Pulsed drain current (TC = 25°C, tp limited by Tjmax)
Avalanche energy, single pulse (L=60mH, Rg=30)
Gate-Source voltage
Power dissipation (TC = 25°C)
Operating junction and storage temperature
Symbol
VDS
Value
650
Unit
V
ID
ID pulse
EAS
VGS
Ptot
Tj , T stg
5
2.5
20
76
±30
49
-55...+150
A
A
mJ
V
W
°C
Rev 1.0
©SkySilicon Co., Ltd .
Page 1



SKJD850N65
Thermal Resistance
Parameter
Thermal resistance, junction – case. Max
Thermal resistance, junction – ambient. Max
SKJF(H&D)850N65
SJMOS N-MOSFET 650V, 0.73Ω, 5A
Symbol
RthJC
RthJA
Value
2.55
67
Unit
°C/W
Electrical Characteristic (at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
min.
Value
typ. max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
BVDSS
VGS(th )
650
2.8
750
3.3
-
3.8
Zero gate voltage drain
current
IDSS
Gate-source leakage current
IGSS
- 0.004 1
- 0.38 1
- 0.6 80
Drain-source on-state
resistance
Transconductance
RDS(on) - 0.73 0.85
---
gfs - 4.1 -
V VGS=0V, ID=250uA
V VDS=VGS,ID=250uA
VDS=650V,VGS=0V
µA TC=25°C
TC=150°C
nA VGS=±30V,VDS=0V
VGS=10V, ID=2.5A,
TC=25°C
TC=150°C
S VDS=20V,ID=2.5A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
Ciss
Coss
Crss
QG
Qgs
Qgd
td(on)
tr
td(off)
tf
RG
- 387 -
- 24 -
- 0.2 -
- 10.9 -
- 4.4 -
- 2.4 -
- 6.8 -
- 8.8 -
- 41 -
- 10.6 -
- 7.8 -
pF
VGS=0V, VDS=100V,
f=1MHz
nC
VGS=10V, VDS=480V,
ID=2.5A, f=1MHz
Tj=25°C, VGS=10V,
ns ID=2.5A, VDS=400V,
Rg=25Ω
VGS=0V, VDS=0V,
f=1MHz
Rev 1.0
©SkySilicon Co., Ltd .
Page 2





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