SJMOS N-MOSFET. SKJQ80N65 Datasheet

SKJQ80N65 N-MOSFET. Datasheet pdf. Equivalent

Part SKJQ80N65
Description SJMOS N-MOSFET
Feature SKJQ80N65 SJMOS N-MOSFET 650V, 63.5mΩ, 43A Features • Skysilicon Super_Junction Gen1 technology • M.
Manufacture SKYSILICON
Datasheet
Download SKJQ80N65 Datasheet

SKJQ80N65 SJMOS N-MOSFET 650V, 63.5mΩ, 43A Features • Skysi SKJQ80N65 Datasheet
Recommendation Recommendation Datasheet SKJQ80N65 Datasheet




SKJQ80N65
SKJQ80N65
SJMOS N-MOSFET 650V, 63.5mΩ, 43A
Features
• Skysilicon Super_Junction Gen1 technology
• Much lower Ron*A performance for On-state efficiency
• Much lower FOM for fast switching efficiency
Applications
• LED/LCD/PDP TV and monitor Lighting
• Solar/Renewable/UPS-Micro Inverter System
• Charger
• Power Supply
Product Summary
VDS
RDS(on)_typ
ID
650V
63.5mΩ
43A
100% Avalanche Tested
Package Marking and Ordering Information
Part #
SKJQ80N65
Marking
-
Package
TO-247
Packing
Tube
Reel Size
N/A
Tape Width
N/A
Qty
50pcs
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
TC = 25°C
TC = 100°C
Pulsed drain current (TC = 25°C, tp limited by Tjmax)
Avalanche energy, single pulse (L=60mH, Rg=30)
Gate-Source voltage
Power dissipation (TC = 25°C)
Operating junction and storage temperature
Symbol
VDS
ID
ID pulse
EAS
VGS
Ptot
Tj , T stg
Value
650
Unit
V
43
33.2
172
1055
±30
442
-55...+150
A
A
mJ
V
W
°C
Rev 1.0
©SkySilicon Co., Ltd .
Page 1



SKJQ80N65
Thermal Resistance
Parameter
Thermal resistance, junction – case. Max
Thermal resistance, junction – ambient. Max
SKJQ80N65
SJMOS N-MOSFET 650V, 63.5mΩ, 43A
Symbol
RthJC
RthJA
Value
0.28
37
Unit
°C/W
Electrical Characteristic (at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
min.
Value
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
BVDSS
VGS(th )
IDSS
IGSS
RDS(on)
gfs
650
3.2
-
-
-
-
-
-
--
3.7 4.2
0.001
6.13
1.1
1
-
80
63.5
142
28
80.00
-
-
V VGS=0V, ID=250uA
V VDS=VGS,ID=250uA
VDS=650V,VGS=0V
µA TC=25°C
TC=150°C
nA VGS=±30V,VDS=0V
VGS=10V, ID=21.5A,
mΩ TC=25°C
TC=150°C
S VDS=20V,ID=21.5A
Dynamic Characteristic
Input Capacitance
Ciss - 3590 -
Output Capacitance
Coss - 175 -
Reverse Transfer
Capacitance
Crss - 29 -
Gate Total Charge
QG - 94 -
Gate-Source charge
Qgs - 20 -
Gate-Drain charge
Qgd - 29 -
Turn-on delay time
td(on)
-
35
-
Rise time
tr - 63 -
Turn-off delay time
td(off) - 126 -
Fall time
tf - 26 -
Gate resistance
RG - 1.2 -
pF
VGS=0V, VDS=100V,
f=1MHz
nC
VGS=10V, VDS=480V,
ID=21.5A, f=1MHz
Tj=25°C, VGS=10V,
ns ID=21.5A, VDS=400V,
Rg=25Ω
VGS=0V, VDS=0V,
f=1MHz
Rev 1.0
©SkySilicon Co., Ltd .
Page 2





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