SKJQ80N65

SKJQ80N65 SJMOS N-MOSFET 650V, 63.5mΩ, 43A Features Skysilicon Super_Junction Gen1 technology Much lower Ron*A performance for On-state efficiency Much lower FOM for fast switching efficiency Applications LED/LCD/PDP TV and monitor Lighting Solar/Renewable/UPS-Micro Inverter System Charger Power Supply Product Summary VDS RDS(on)_typ ID 650V 63.5mΩ 43A 100% Avalanche Tested Package Marking and Ordering Information Part # SKJQ80N65 Marking - Package TO-247 Packing Tube Reel Size N/A Tape Width N/A Qty 50pcs Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=60mH, Rg=30Ω) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Symbol VDS ID ID pulse EAS VGS Ptot Tj , T stg Value 650 Unit V 43 33.2 172 1055 ±30 442 -55...+150 A A mJ V W °C Rev 1.0 ©SkySil...