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FNK4620 Dataheets PDF



Part Number FNK4620
Manufacturers FNK
Logo FNK
Description Complementary Enhancement Mode Field Effect Transistor
Datasheet FNK4620 DatasheetFNK4620 Datasheet (PDF)

FNK4620 FNK4620 Complementary Enhancement Mode Field Effect Transistor General Description The FNK4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=10V) < 27mΩ (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 30mΩ (VGS = -10V) < 44mΩ (VGS = -4.5V) Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D.

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FNK4620 FNK4620 Complementary Enhancement Mode Field Effect Transistor General Description The FNK4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=10V) < 27mΩ (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 30mΩ (VGS = -10V) < 44mΩ (VGS = -4.5V) Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 D2 G2 S2 n-channel D1 G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current F TA=70°C Pulsed Drain Current B ID IDM 7.2 6.2 64 Power Dissipation F Avalanche Current B TA=25°C TA=70°C Repetitive avalanche energy 0.3mH B PD IAR EAR 2 1.44 9 12 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Max p-channel -30 ±2.


SKJQ80N65 FNK4620 C3M0030090K


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