Silicon Carbide Power MOSFET
VDS
1000 V
C3M0120100K
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Cha...
Description
VDS
1000 V
C3M0120100K
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Channel Enhancement Mode
Features
Package
C3MTM SiC MOSFET technology
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies
Part Number C3M0120100K
Drain (Pin 1, TAB)
Gate (Pin 4)
Driver Source (Pin 3)
Power Source (Pin 2)
Package TO 247-4
Marking C3M0120100K
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax VGSmax VGSop
Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static)
ID
Continuous Drain Current
1000 -8/+19 -4/+15
22 14
ID(pulse) Pulsed Drain Current
50
PD
Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL
Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V
83
-55 to +150
260
Unit
Test Conditions
V VGS = 0 V, ID = 100 μA V AC (f...
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