Schottky Diode. C3D1P7060Q Datasheet

C3D1P7060Q Diode. Datasheet pdf. Equivalent

C3D1P7060Q Datasheet
Recommendation C3D1P7060Q Datasheet
Part C3D1P7060Q
Description Silicon Carbide Schottky Diode
Feature C3D1P7060Q; C3D1P7060Q Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 600-Volt Schottky Rectifier •.
Manufacture CREE
Datasheet
Download C3D1P7060Q Datasheet




CREE C3D1P7060Q
C3D1P7060Q
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Small compact surface mount package
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
LED Lighting
Medical imaging systems
Package
VRRM
= 600 V
IF (TC=135˚C) = 3.3 A
Qc = 4 nC
PowerQFN 3.3x3.3
Part Number
C3D1P7060Q
Package
QFN 3.3
Marking
C3D1P7060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter
Value
Unit
Test Conditions
VRRM Repetitive Peak Reverse Voltage
VRSM Surge Peak Reverse Voltage
VDC DC Blocking Voltage
IF Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Peak Forward Surge Current
IF,Max Non-Repetitive Peak Forward Surge Current
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
600
600
600
9.7
3.3
1.7
7
4.5
15
12
50
40
35.5
13
-55 to
+160
V
V
V
TC=25˚C
A TC=135˚C
TC=150˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
˚C
1 C3D1P7060Q Rev. F, 10-2015
Note
Fig 3
Fig. 8
Fig. 8
Fig. 4



CREE C3D1P7060Q
Electrical Characteristics
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
Typ.
1.5
1.7
3
6
Max.
1.7
2.4
15
55
Unit
V
μA
QC Total Capacitive Charge
4
C Total Capacitance
82.5
7
6
EC Capacitance Stored Energy
0.6
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
nC
pF
μJ
Test Conditions
IF = 1.7 A TC=25°C
IF = 1.7 A TC=150°C
VR = 600 V TC=25°C
VR = 600 V TC=150°C
VR = 400 V, IF = 1.7A
di/dt = 500 A/μs
TC = 25°C
VR = 0 V, TC = 25°C, f = 1 MHz
VR = 200 V, TC = 25˚C, f = 1 MHz
VR = 400 V, TC = 25˚C, f = 1 MHz
VR = 400 V
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
3.8
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
14
12 TJ = -55 °C
TJ = 25 °C
10
TJ = 75 °C
8 TJ = 125 °C
6 TJ = 150 °C
4
2
0
0 2000.0 400 1 . 0 600 2 8.000 1030.00 12004 . 0
FowardVVFo(ltVag)e, VF (V)
5.0
Figure 1. Forward Characteristics
6.0
2 C3D1P7060Q Rev. F, 10-2015
100
80
60 TJ = 150 °C
TJ = 125 °C
40 TJ = 75 °C
TJ = 25 °C
20 TJ = -55 °C
0
0 100 200 300 400 500 600 700 800 900 1000 1100
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics



CREE C3D1P7060Q
Typical Performance
18
16
10% Duty
20% Duty
14
30% Duty
50% Duty
12
70% Duty
DC
10
8
6
4
2
0
25 40 55 70 85 100 115 130 145 160
TTCC(˚°CC)
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TTCC˚CC)
Figure 3. Current Derating
6
Conditions:
TJ = 25 °C
5
4
3
2
1
0
0 100 200 300 400 500 600 700
ReverseVVoRlt(aVge), VR (V)
Figure 4. Power Derating
90
Conditions:
80 TJ = 25 °C
Ftest = 1 MHz
70 Vtest = 25 mV
60
50
40
30
20
10
0
0 1 10 100 1000
ReversVe VRo(ltVag)e, VR (V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
3 C3D1P7060Q Rev. F, 10-2015







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