Schottky Diode. C3D04065E Datasheet

C3D04065E Diode. Datasheet pdf. Equivalent

Part C3D04065E
Description Silicon Carbide Schottky Diode
Feature C3D04065E Silicon Carbide Schottky Diode Z-Rec® Rectifier VRRM = 650 V IF (TC=135˚C) = 6 A Qc = .
Manufacture CREE
Datasheet
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C3D04065E Silicon Carbide Schottky Diode Z-Rec® Rectifier V C3D04065E Datasheet
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C3D04065E
C3D04065E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
VRRM
= 650 V
IF (TC=135˚C) = 6 A
Qc =   10 nC
Features
Package
650-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
TO-252-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
CASE
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
C3D04065E
Package
TO-252-2
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Marking
C3D04065
Note
VRRM
Repetitive Peak Reverse Voltage
650 V
VRSM
Surge Peak Reverse Voltage
650 V
VDC DC Blocking Voltage
IF Continuous Forward Current
IFRM
IFSM
IF,Max
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Diode dV/dt ruggedness
∫i2dt
i2t value
TJ , Tstg Operating Junction and Storage Temperature
650
13.5
6
4
17
12
25
19
220
160
52
22.5
200
3.1
1.8
-55 to
+175
V
TC=25˚C
A TC=135˚C
TC=155˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
V/ns VR=0-650V
A2s
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
˚C
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 C3D04065E Rev. A, 08-2016



C3D04065E
Electrical Characteristics
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
Typ.
1.4
1.7
6
12
Max.
1.7
2.4
30
120
Unit
V
μA
QC Total Capacitive Charge
10
C Total Capacitance
231
18.5
15
EC Capacitance Stored Energy
1.4
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
nC
pF
μJ
Test Conditions
IF = 4 A TJ=25°C
IF = 4 A TJ=175°C
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 4 A
di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 400 V
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
2.9
Unit
°C/W
Note
Fig. 9
Typical Performance
12
10 TJ = -55 °C
TJ = 25 °C
8 TJ = 75 °C
TJ = 125 °C
6
TJ = 175 °C
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
FowardVVFo(ltVag)e, VF (V)
Figure 1. Forward Characteristics
2 C3D04065E Rev. A, 08-2016
100
80
60 TJ = 175 °C
TJ = 125 °C
40 TJ = 75 °C
TJ = 25 °C
20 TJ = -55 °C
0
0 200 400 600 800 1000 1200
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics





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