Schottky Diode. CVFD20065A Datasheet

CVFD20065A Diode. Datasheet pdf. Equivalent

Part CVFD20065A
Description Silicon Carbide Schottky Diode
Feature CVFD20065A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package • 650-Volt Schottky .
Manufacture CREE
Datasheet
Download CVFD20065A Datasheet

CVFD20065A Silicon Carbide Schottky Diode Z-Rec® Rectifier CVFD20065A Datasheet
Recommendation Recommendation Datasheet CVFD20065A Datasheet




CVFD20065A
CVFD20065A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
650-Volt Schottky Rectifier
Reduced VF for Improved Efficiency
High Humidity Resistance
Zero Forward and Reverse Recovery Voltage
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
TO-220-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
Applications
Power Inverters
Motor Drives
EV Chargers
Power Factor Correction
Server Power Supplies
Part Number
CVFD20065A
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM =
650 V
IF (TC=135˚C) =
26 A
Qc   = 62 nC
CASE
Package
TO-220-2
Marking
CVFD20065
Test Conditions
Note
VRRM
VRSM
VDC
IF
IFRM
IFSM
IF,Max
Ptot
∫i2dt
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Peak Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
i2t value (Per Leg)
Operating Junction and Storage Temperature
TO-220 Mounting Torque
650 V
650 V
650 V
57 TC=25˚C
26 A TC=135˚C
20 TC=149˚C
91
61.5
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
206
180
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
1400
1100
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
187.5
81
W
TC=25˚C
TC=110˚C
212
162
A2s
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
-55 to
+175
˚C
1 Nm M3 Screw
8.8 lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 CVFD20065A Rev. C, 08-2016



CVFD20065A
Electrical Characteristics
Symbol
Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.35
1.65
8
2
30
5
62
1100
113
108
1.45
1.80
80
300
V
IF = 20 A TJ=25°C
IF = 20 A TJ=175°C
μA
VR = 650 V , TJ=25°C
VR = 400 V , TJ=25°C
μA
VR = 650 V , TJ=175°C
VR = 400 V , TJ=175°C
VR = 400 V
nC di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
9.5
μJ VR = 400 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.8
Unit
°C/W
Typical Performance
Note
Fig. 1
Fig. 2
Fig. 2
Fig. 5
Fig. 6
Fig. 7
60
50 TJ = -55 °C
TJ = 25 °C
40 TJ = 75 °C
TJ = 125 °C
30
TJ = 175 °C
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
FowardVVFol(taVge), VF (V)
Figure 1. Forward Characteristics
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
TJ = -55 °C
100 200 300 400 500 600 700
ReverseVVRol(taVg)e, VR (V)
Figure 2. Reverse Characteristics
2 CVFD20065A Rev. C, 08-2016





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