Schottky Diode. C4D10120H Datasheet

C4D10120H Diode. Datasheet pdf. Equivalent

Part C4D10120H
Description Silicon Carbide Schottky Diode
Feature C4D10120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • .
Manufacture CREE
Datasheet
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C4D10120H Silicon Carbide Schottky Diode Z-Rec® Rectifier F C4D10120H Datasheet
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C4D10120H
C4D10120H
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Positive Temperature Coefficient on VF
Increased Creepage/Clearance Distance
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Package
VRRM
=
IF (TC=135˚C) =
Qc =
1200 V
 15 A
  52 nC
TO-247-2
PIN 1
PIN 2
CASE
Part Number
C4D10120H
Package
TO-247-2
Marking
C4D10120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VR
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
IF Continuous Forward Current
IFRM
IFSM
IF,Max
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
Diode dV/dt ruggedness
∫i2dt
i2t value
TJ , Tstg
Operating Junction and Storage Temperature
TO-247 Mounting Torque
1200
V
1300
V
1200
31.5
15
10
46
30
67
59
750
620
153
66
200
22.5
17.5
-55 to
+175
1
8.8
V
A
A
A
A
W
V/ns
A2s
˚C
TC=25˚C
TC=135˚C
TC=155˚C
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
TC=25˚C
TC=110˚C
VR=0-960V
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 C4D10120H Rev. -, 02-2018



C4D10120H
Electrical Characteristics
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.2
30
55
52
754
45
38
1.8
3
250
350
V
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 10A
nC di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
14.5
μJ VR = 800 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.98
Unit
°C/W
Note
Fig. 9
Typical Performance
20
18
16
14
12
10
8
6
4
2
0
0
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
0.5 1 1.5 2 2.5
VF FoVrwF a(rVd)Voltage
3
Figure 1. Forward Characteristics
3.5
600.00
500.00
400.00
300.00
200.00
100.00
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
0.00
0
500 1000 1500
VR RVevRe(rsVe)Voltage
Figure 2. Reverse Characteristics
2000
2 C4D10120H Rev. -, 02-2018





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