Schottky Diode. C4D15120H Datasheet

C4D15120H Diode. Datasheet pdf. Equivalent

Part C4D15120H
Description Silicon Carbide Schottky Diode
Feature C4D15120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • .
Manufacture CREE
Datasheet
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C4D15120H Silicon Carbide Schottky Diode Z-Rec® Rectifier F C4D15120H Datasheet
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C4D15120H
C4D15120H
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Positive Temperature Coefficient on VF
Increased Creepage/Clearance Distance
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Package
VRRM
=
IF (TC=135˚C) =
Qc =
1200 V
 19 A
 77.5 nC
TO-247-2
PIN 1
PIN 2
CASE
Part Number
C4D15120H
Package
TO-247-2
Marking
C4D15120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VR
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
IF Continuous Forward Current
IFRM
IFSM
IF,Max
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
Diode dV/dt ruggedness
∫i2dt
i2t value
TJ , Tstg
Operating Junction and Storage Temperature
TO-247 Mounting Torque
1200
V
1300
V
1200
39
19
15
64
42
87
72
900
750
174.5
75.5
200
38
26
-55 to
+175
1
8.8
V
A
A
A
A
W
V/ns
A2s
˚C
TC=25˚C
TC=135˚C
TC=147˚C
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
TC=25˚C
TC=110˚C
VR=0-960V
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 C4D15120H Rev. -, 02-2018



C4D15120H
Electrical Characteristics
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.3
35
120
77.5
1200
70
50
1.8
3
200
300
V
IF = 15 A TJ=25°C
IF = 15 A TJ=175°C
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 15A
nC di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
22
μJ VR = 800 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.86
Unit
°C/W
Note
Fig. 9
Typical Performance
30
TJ=-55°C
25 TTTTJJJJ====27115527°°55CC°°CC
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VF (V)
Figure 1. Forward Characteristics
2
1.8
1.6
1.4
1.2
1
0.8
TJ=-55°C
0.6
0.4
TTTTJJJJ====27115527°°55CC°°CC
0.2
0
200 400 600 800 1000 1200 1400 1600 1800
VR (V)
Figure 2. Reverse Characteristics
2 C4D15120H Rev. -, 02-2018





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