Schottky Diode. C4D15120D Datasheet

C4D15120D Diode. Datasheet pdf. Equivalent

Part C4D15120D
Description Silicon Carbide Schottky Diode
Feature C4D15120D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2-KVolt Schottky Rectifier •.
Manufacture CREE
Datasheet
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C4D15120D
C4D15120D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
1.2-KVolt Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Package
VRRM
= 1200 V
IF (TC=135˚C)  =     24 A**
Qc = 74 nC**
TO-247-3
Part Number
C4D15120D
Package
TO-247-3
Marking
C4D15120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value
Test Conditions
VRRM Repetitive Peak Reverse Voltage
VRSM Surge Peak Reverse Voltage
VDC DC Blocking Voltage
IF
Continuous Forward Current
(Per Leg/Device)
IFRM
IFSM
IF,Max
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation(Per Leg/Device)
Diode dV/dt ruggedness
∫i2dt i2t value
TJ, Tstg
Operating Junction and Storage Temperature
TO-247 Mounting Torque
* Per Leg, ** Per Device
1200
V
1300
V
1200
24.5/49
12/24
7.5/15
38*
25*
66*
49.5*
600*
480*
135/270
58.5/117
200
20.5*
12.25*
-55 to +175
1
8.8
V
A
A
A
A
W
V/ns
A2s
˚C
Nm
lbf-in
TC=25˚C
TC=135˚C
TC=157˚C
TC=25˚C, tP=10 ms, Half Sine Pulse
TC-110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
TC=25˚C
TC=110˚C
VR=0-960V
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
M3 Screw
6-32 Screw
1 C4D15120D Rev. D, 12-2017
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4



C4D15120D
Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
1.5
2.2
1.8
3
V
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
IR Reverse Current
35
100
250
350
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QC Total Capacitive Charge
VR = 800 V, IF = 8 A
37 nC di/dt = 200 A/μs
TJ = 25°C
C Total Capacitance
560 VR = 0 V, TJ = 25°C, f = 1 MHz
37 pF VR = 400 V, TJ = 25˚C, f = 1 MHz
27 VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
10.5
μJ VR = 800 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
* Per Leg, ** Per Device
Typ.
1.11*
0.56**
Max.
Unit
°C/W
Note
Fig. 9
Typical Performance
14
TJ=-55°C
12 TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
10
8
6
4
2
800
700
600
500
400
300 TJ=-55°C
TJ= 25°C
TJ= 75°C
200 TJ =125°C
TJ =175°C
100
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VF (V)
Figure 1. Forward Characteristics
0
0 500 1000 1500
VR (V)
Figure 2. Reverse Characteristics
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
2000
2 C4D15120D Rev. D, 12-2017





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