Schottky Diode. CPW4-1200-S005B Datasheet

CPW4-1200-S005B Diode. Datasheet pdf. Equivalent

Part CPW4-1200-S005B
Description Silicon Carbide Schottky Diode
Feature CPW4-1200-S005B Silicon Carbide Schottky Diode Chip Z-Rec ® Rectifier Features • 1.2kVSchottky Rect.
Manufacture CREE
Datasheet
Download CPW4-1200-S005B Datasheet

CPW4-1200-S005B Silicon Carbide Schottky Diode Chip Z-Rec ® CPW4-1200-S005B Datasheet
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CPW4-1200-S005B
CPW4-1200-S005B
Silicon Carbide Schottky Diode Chip
Z-Rec ® Rectifier
Features
• 1.2kVSchottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Chip Outline
VRRM =
1200 V
IF = 5 A
Qc = 27 nC
Part Number
CPW4-1200-S005B
Die Size
1.69 x 1.69 mm2
Anode
Al
Cathode
Ni/Ag
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200 V
VRSM
Surge Peak Reverse Voltage
1300 V
VR DC Peak Blocking Voltage
IF Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Forward Surge Current
IF,Max Non-Repetitive Peak Forward Current
TJ , Tstg Operating Junction and Storage Temperature
TProc
Maximum Processing Temperature
1. Assumes RθJC Thermal Resistance of 1.85˚C/W or less
1200 V
5
26
18
46
36
400
320
-55 to
+175
325
A TJ=175˚C
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
˚C
˚C 10 min. maximum
Subject to change without notice.
www.cree.com/power
Note
1
1
1
1



CPW4-1200-S005B
Electrical Characteristics
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
Typ.
1.4
1.9
20
40
Max.
1.8
3
150
300
27
390
27
20
Unit
V
μA
nC
pF
Test Conditions
IF = 5 A TJ=25°C
IF = 5 A TJ=175°C
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 5A
di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Note
Fig. 1
Fig. 2
Fig. 3
Fig. 4
Mechanical Parameters
Parameter
Die Size
Anode Pad Size
Anode Pad Opening
Thickness
Wafer Size
Anode Metalization (Al)
Cathode Metalization (Ni/Ag)
Frontside Passivation
Typ.
1.69 x 1.69
1.40 x 1.40
1.12 x 1.12
377 ± 10%
100
4
1.4
Polyimide
Unit
mm
mm
mm
μm
mm
μm
μm
2 CPW4-1200-S005 Rev. B





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