Schottky Diode. CPW4-1200-S008B Datasheet

CPW4-1200-S008B Diode. Datasheet pdf. Equivalent

Part CPW4-1200-S008B
Description Silicon Carbide Schottky Diode
Feature CPW4-1200-S008B Silicon Carbide Schottky Diode Chip Z-Rec® Rectifier Features • 1.2kV Schottky Rect.
Manufacture CREE
Datasheet
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CPW4-1200-S008B
CPW4-1200-S008B
Silicon Carbide Schottky Diode Chip
Z-Rec® Rectifier
Features
• 1.2kV Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Chip Outline
VRRM = 1200 V
IF = 8 A
Qc = 37 nC
Part Number
CPW4-1200-S008B
Die Size
2.00 x 2.00 mm2
Anode
Al
Cathode
Ni/Ag
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200 V
VRSM
Surge Peak Reverse Voltage
1300 V
VR DC Peak Blocking Voltage
IF Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Forward Surge Current
IF,Max Non-Repetitive Peak Forward Current
TJ , Tstg Operating Junction and Storage Temperature
TProc
Maximum Processing Temperature
1. Assumes RθJC Thermal Resistance of 1.26˚C/W or less
1200 V
8
37.5
25
64
49.5
600
480
-55 to
+175
325
A TJ=175˚C
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
˚C
˚C 10 min. maximum
Subject to change without notice.
www.cree.com/power
Note
1
1
1
1



CPW4-1200-S008B
Electrical Characteristics
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
Typ.
1.5
2.2
35
100
Max.
1.8
3
250
350
37
560
37
27
Unit
V
μA
nC
pF
Test Conditions
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 8 A
di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Note
Fig. 1
Fig. 2
Fig. 3
Fig. 4
Mechanical Parameters
Parameter
Die Size
Anode Pad Size
Anode Pad Opening
Thickness
Wafer Size
Anode Metalization (Al)
Cathode Metalization (Ni/Ag)
Frontside Passivation
Typ.
2.00 x 2.00
1.72 x 1.72
1.44 x 1.44
377 ± 10%
100
4
1.8
Polyimide
Unit
mm
mm
mm
μm
mm
μm
μm
2 CPW4-1200-S008 Rev. A





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