STGP10NC60KD

STGB10NC60KDT4, STGD10NC60KDT4 STGF10NC60KD, STGP10NC60KD Datasheet 10 A, 600 V short-circuit rugged IGBT TAB 3 1 D2 PAK TAB 23 1 DPAK TAB 3 2 1 TO-220FP TO-220 1 23 C(2, TAB) G(1) E(3) NG1E3C2T Features Lower on voltage drop (VCE(sat)) Lower Cres / Cies ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 μs Applications High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drives Description These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Product status links STGB10NC60KDT4 STGD10NC60KDT4 STGF10NC60KD STGP10NC60KD DS4320 - Rev 8 - May 2023 For further information contact your local STMicroelectronics sales office. www.st.com STGB10NC60KDT4, STGD10NC60KDT4,STGF10NC60KD, STGP10NC60KD Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter D²PAK, TO-220 Value DPAK VCES Collector-emitter voltage (VGE = 0 V) 600 Continuous collector current at TC = 25 °C 20 IC(1) Continuous collector current at TC = 100 °C 10 ICL(2) Turn-off latching current 30 ICP(3) Pulsed collector current 30 VGE Gate-emitter voltage ±20 IF Diode RMS forward current at TC = 25 °C 10 IFSM Surge...