RECTIFIER DIODES. UF1002 Datasheet

UF1002 DIODES. Datasheet pdf. Equivalent

Part UF1002
Description ULTRA FAST RECTIFIER DIODES
Feature UF1001 ~ UF1007 PRV : 50 ~ 1000 Volts Io : 1.0 Ampere ULTRA FAST RECTIFIER DIODES DO - 41 FEATURES.
Manufacture EIC
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UF1002
UF1001 ~ UF1007
PRV : 50 ~ 1000 Volts
Io : 1.0 Ampere
ULTRA FAST
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL UF1001 UF1002 UF1003 UF1004 UF1005 UF1006 UF1007 UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 A
VDC 50 100 200 400 600 800 1000 V
IF(AV) 1.0 A
IFSM
VF
30
1.1
A
1.7 V
Maximum DC Reverse Current
Tj = 25 C
at Rated DC Blocking Voltage
Tj = 100 C
Maximum Reverse Recovery Time (1)
Typical Junction Capacitance (2)
Typical Thermal Resistance (3)
Junction Temperature Range
Storage Temperature Range
IR
IR(H)
Trr
CJ
RθJA
TJ
TSTG
5
100
50
20
25
- 55 to + 150
- 55 to + 150
75
10
µA
µA
ns
pf
C/W
C
C
Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
( 3 ) Thermal Resistance from Junction to Ambient.
Page 1 of 2
Rev. 02 : March 25, 2005



UF1002
RATING AND CHARACTERISTIC CURVES ( UF1001 ~ UF1007 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
Trr
+ 0.5 A
+
50 Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25 A
1 OSCILLOSCOPE
( NOTE 1 )
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
0.8
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
8.3 ms SINGLE HALF SINE WAVE
24
0.6 18
0.4
0.2
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125 150
175
AMBIENT TEMPERATURE, ( C)
12
6
0
12
4 6 10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
UF1001
1.0 THRU
UF1004
0.1
UF1005
THRU
UF1007
TJ = 25 C
0.0 Pulse Width = 300 µs
1% Duty Cycle
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
TJ = 100 C
1.0
0.1
TJ = 25 C
0.010
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 25, 2005





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