ULTRAFAST DIODE. US1G Datasheet

US1G DIODE. Datasheet pdf. Equivalent


Part US1G
Description 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE
Feature ® WON-TOP ELECTRONICS US1A – US1M 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Pb Features .
Manufacture WON-TOP
Datasheet
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US1G
®
WON-TOP ELECTRONICS
US1A – US1M
1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE
Pb
Features
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
A
Ultra-Fast Recovery Time
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
C
B
F
H
G
E
D
Mechanical Data
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
SMA/DO-214AC
Dim Min Max
A 2.29 2.92
B 4.00 4.60
C 1.27 1.90
D
0.152
0.305
E 4.80 5.30
F 2.00 2.44
G
0.051
0.203
H 0.76 1.52
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol US1A US1B US1D US1G US1J US1K US1M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
VR
VR(RMS)
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
Average Rectified Output Current
@TL = 110°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
@IF = 1.0A
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Lead (Note 3)
Operating and Storage Temperature Range
IO
IFSM
VFM
IRM
trr
CJ
R JA
R JL
TJ, TSTG
1.0
30
1.0
50
20
1.3
10
50
75
27
-55 to +150
1.7
75
15
A
A
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on PCB with 5.0mm x 5.0mm copper pads.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1



US1G
US1A – US1M
1.0
Mounted on PCB
with 5.0 x 5.0mm
Copper Pads
0.8
0.6
0.4
0.2
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TL, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
30
Single Half-Sine-Wave
JEDEC Method
24
®
10
1.0
US1A – US1D
WON-TOP ELECTRONICS
US1G
0.1
US1J – US1M
0.01
0
0.4 0.8 1.2 1.6 2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
100
18 10
TA = 100°C
12 1.0
TA = 25°C
6 0.1
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
50
40
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
f = 1MHz
30
US1A – US1G
20
US1J – US1M
10
www.wontop.com
2
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: September, 2012







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