EFFICIENCY RECTIFIER. US1AB Datasheet

US1AB RECTIFIER. Datasheet pdf. Equivalent


Part US1AB
Description SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
Feature SURFACE MOUNT HIGH EFFICIENCY RECTIFIER US1AB ~ US1MB Surface Mount High Efficiency Rectifier Feat.
Manufacture MEI SEMI
Datasheet
Download US1AB Datasheet


SHANGHAI SUNRISE ELECTRONICS CO., LTD. US1AB THRU US1MB SURF US1AB Datasheet
US1AB THRU US1MB 1A Surface Mount Ultra Fast Rectifiers ■ F US1AB Datasheet
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER US1AB ~ US1MB Surfa US1AB Datasheet
0.086(2.20) 0.075(1.91)) 0.096(2.44)) 0.084(2.13) 0.060(1.52 US1AB Datasheet
Recommendation Recommendation Datasheet US1AB Datasheet




US1AB
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
US1AB ~ US1MB
Surface Mount High Efficiency Rectifier
Features  
Plastic package has Underwriters Laboratory 
        Flammability Classification 94V0
Builtin strain relief, ideal for automated placement 
Fast switching speed for high efficiency 
Glass passivated chip junction 
High temperature soldering guaranteed: 
         260/10 seconds 
RoHS and REACH Compliance 
Mechanical Data
Case: 
Polarity: 
Terminal: 
Mounting Position: 
JEDEC DO214AA molded plastic over glass passivated chip 
Color band denotes cathode end. 
Solder plated, solderable per MILSTD 750, Method 2026 
                     / 
Weight: 
0.003 ounce, 0.093 gram 
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol 
VRRM 
VRMS 
VDC 
Description 
Max Recurrent Peak Reverse Voltage 
Max RMS Voltage 
Max DC Blocking Voltage
 
US1AB 
 
50 
35 
50 
US1BB 
 
100
70
100
US1DB 
200
140
200
US1GB 
400
280
400
US1JB 
600
420
600
I(AV) 
Max Average Forward Rectified Current 
1.0 
IFSM 
Peak Forward Surge Current, 8.3ms single 
half sine 
30 
TJ,TSTG  Operating and Storage Temperature Range 
55 to +150 
US1KB 
800 
560 
800 
US1MB  Unit
1000 
700 
1000 
V 
V 
V 
A 
A 
 
Conditions 
TA=55 
JEDEC 
method 
 
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol 
Description 
US1AB  US1BB 
US1DB 
US1GB 
US1JB 
US1KB 
US1MB 
VF
Rθ‐JA 
Rθ‐JL 
IR
 TRR
Max Instantaneous 
Forward Voltage 
Typical Thermal 
Resistance 
Max DC Reverse 
Current at Rated DC 
Blocking Voltage 
Maximum reverse 
recovery time  
1.0 
50 
1.3 
88 
28 
5 
100 
1.7 
75 
Unit 
V 
℃/W 
μA 
nS 
Conditions 
1.0A 
Note 2 
TA=25 
TA=125 
Note 1 
CJ 
Typical Junction 
capacitance 
20 
15 
pF 
Measured at 
1.0MHz/4.0V 
Note:     
1Test conditions: IF= 0.5A, IR=1.0A, IRR = 0.25A 
2Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2”x 0.2”( 5.0x5.0mm) copper pad 
areas. 
www.meisemi.com
Rev. 0 2010-07-15
Page 1 of 3



US1AB
MEI SEMI 
Surface Mount High Efficiency Rectifier
US1AB ~ US1MB
RATINGS AND CHARACTERISTIC CURVES US1A THRU US1M
www.meisemi.com
Rev. 0 2010-07-15
Page 2 of 3







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