10A SCRs. JCT610A Datasheet

JCT610A SCRs. Datasheet pdf. Equivalent


Part JCT610A
Description 10A SCRs
Feature JIEJIE MICROELECTRONICS CO. , Ltd JCT610/810 Series 10A SCRs Rev.3.0 DESCRIPTION: JCT610/810 seri.
Manufacture JIEJIE
Datasheet
Download JCT610A Datasheet


JIEJIE MICROELECTRONICS CO. , Ltd JCT610/810 Series 10A SCR JCT610A Datasheet
Recommendation Recommendation Datasheet JCT610A Datasheet




JCT610A
JIEJIE MICROELECTRONICS CO. , Ltd
JCT610/810 Series 10A SCRs
Rev.3.0
DESCRIPTION:
JCT610/810 series of silicon controlled rectifiers, with
2
high ability to withstand the shock loading of large
current, provide high dv/dt rate with strong resistance
1 2 3 TO-251
13
TO-252
to electromagnetic interference. They are especially
recommended for use on solid state relay, motorcycle,
power charger, T-tools etc.
JCTx10A provides insulation voltage rated at 2500V
1 2 3 TO-220A 1 2 3 TO-220B
Insulated
Non-Insulated
RMS and JCTx10F provides insulation voltage rated at
K(1)
2000V RMS from all three terminals to external heatsink.
G(3)
JCTx10A/JCTx10F series comply with UL standards
(File ref: E252906).
MAIN FEATURES
123
TO-220F
Insulated
A(2)
Symbol
VDRM/ VRRM
IT(RMS)
IGT
JCT610
600V
10A
10mA
JCT810
800V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage(Tj=25)
Repetitive peak reverse voltage(Tj=25)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
RMS on-state current
TO-251/ TO-252
(TC=105)
TO-220B(Non-Ins)
(TC=110)
Symbol
Tstg
Tj
VDRM
VRRM
VDSM
VRSM
IT(RMS)
Value
-40-150
-40-125
600/800
600/800
VDRM +100
VRRM +100
10
Unit
V
V
V
V
A
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JCT610A
JCT610/810 Series
JieJie Microelectronics CO. , Ltd
TO-220A(Ins) /
RMS on-state current TO-220F(Ins)
(TC=85)
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
IT(RMS)
ITSM
I2t
dI/dt
IGM
10 A
120 A
72 A2s
50 As
4A
Average gate power dissipation
PG(AV)
1
W
Peak gate power
PGM 5 W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
IGT
VGT
VGD
IL
IH
dV/dt
VD=12V RL=33Ω
VD=VDRM Tj=125RL=3.3KΩ
IG=1.2IGT
IT=500mA
VD=2/3VDRM Gate Open Tj=125
-
-
0.2
-
-
50
- 10
- 1.5
--
- 25
- 15
--
Unit
mA
V
V
mA
mA
Vs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=20A tp=380μs
Tj=25
IDRM
IRRM
VD=VDRM VR=VRRM
Tj=25
Tj=125
Value(MAX)
1.55
5
1
Unit
V
μA
mA
TEL+86-513-83639777
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http://www.jjwdz.com







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