31A SCRs. JCT1231 Datasheet

JCT1231 SCRs. Datasheet pdf. Equivalent


Part JCT1231
Description 31A SCRs
Feature JIEJIE MICROELECTRONICS CO. , Ltd JCT1231 Series 31A SCRs DESCRIPTION: JCT1231 series of silicon co.
Manufacture JIEJIE
Datasheet
Download JCT1231 Datasheet


JIEJIE MICROELECTRONICS CO. , Ltd JCT1231 Series 31A SCRs D JCT1231 Datasheet
JIEJIE MICROELECTRONICS CO. , Ltd JCT1231 Series 31A SCRs D JCT1231A Datasheet
JIEJIE MICROELECTRONICS CO. , Ltd JCT1231 Series 31A SCRs D JCT1231B Datasheet
JIEJIE MICROELECTRONICS CO. , Ltd JCT1231 Series 31A SCRs D JCT1231C Datasheet
Recommendation Recommendation Datasheet JCT1231 Datasheet




JCT1231
JIEJIE MICROELECTRONICS CO. , Ltd
JCT1231 Series 31A SCRs
DESCRIPTION:
JCT1231 series of silicon controlled rectifiers,
with high ability to withstand the shock loading
of large current, provide high dv/dt rate with strong
resistance to electromagnetic interference. They
are especially recommended for use on solid state
relay, motorcycle, power charger, T-tools etc.
JCT1231A provides insulation voltage rated at
2500V RMS from all three terminals to external
heatsi nk.
MAIN FEATURES
Rev.2.0
1 2 3 TO-220A 1 2 3 TO-220B
Insulated
Non-Insulated
1 2 3 TO-220C
A(2)
K(1)
G(3)
Symbol
IT(RMS)
VDRM /V RRM
IGT
JCT1231
31A
1200V
40mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage(Tj=25)
Repetitive peak reverse voltage(Tj=25)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
TO-220A(Ins)
RMS on-state current
(TC=80)
TO-220B(Non-Ins)/
TO-220C (TC=95)
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Tstg
Tj
VDRM
VRRM
VDSM
VRSM
IT(RMS)
ITSM
I2t
TEL+86-513-83639777
- 1 / 5-
Value
-40-150
-40-125
1200
1200
VDRM +100
VRRM +100
Unit
V
V
V
V
31 A
200 A
200 A2s
http://www.jjwdz.com



JCT1231
JCT1231 Series
Critical rate of rise of on-state current
( IG=2× IGT)
Peak gate current
Average gate power dissipation
Peak gate power
JieJie Microelectronics CO. , Ltd
dI/dt 150 As
IGM
PG(AV)
PGM
1.5
2.0
5
A
W
W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
IGT VD=12V RL=33Ω
VGT
VGD VD=VDRM Tj=125RL=3.3KΩ
- - 40
- - 1.3
0.2 -
-
IL IG=1.2IGT
- - 90
IH
dV/dt
IT=500mA
VD=2/3VDRM Gate Open Tj=125
-
500
-
-
50
-
Unit
mA
V
V
mA
mA
Vs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM
IDRM
IRRM
ITM=45A tp=380μs
VD=VDRM V R=VRRM
Tj=25
Tj=25
Tj=125
Value(MAX)
1.8
0.5
10
Unit
V
mA
mA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c) junction to case(AC)
TO-220A(Ins)
TO-220B(Non-Ins)/
TO-220C
Value
2.1
1.3
Unit
/W
TEL+86-513-83639777
- 2 / 5-
http://www.jjwdz.com







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