40A SCRs. JCT1240 Datasheet

JCT1240 SCRs. Datasheet pdf. Equivalent


Part JCT1240
Description 40A SCRs
Feature JIEJIE MICROELECTRONICS CO. , Ltd JCT1240 Series 40A SCRs Rev.3.0 DESCRIPTION: JCT1240 series of.
Manufacture JIEJIE
Datasheet
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JIEJIE MICROELECTRONICS CO. , Ltd JCT1240 Series 40A SCRs JCT1240 Datasheet
JIEJIE MICROELECTRONICS CO. , Ltd JCT1240 Series 40A SCRs JCT1240A Datasheet
JIEJIE MICROELECTRONICS CO. , Ltd JCT1240 Series 40A SCRs JCT1240S Datasheet
JIEJIE MICROELECTRONICS CO. , Ltd JCT1240 Series 40A SCRs JCT1240Z Datasheet
Recommendation Recommendation Datasheet JCT1240 Datasheet




JCT1240
JIEJIE MICROELECTRONICS CO. , Ltd
JCT1240 Series 40A SCRs
Rev.3.0
DESCRIPTION:
JCT1240 series of silicon controlled rectifiers, with
high ability to withstand the shock loading of large
current, provide high dv/dt rate with strong resistance
to electromagnetic interference. They are especially
recommended for use on solid state relay, motorcycle,
123
TO-3P
Insulated
12 3
TO-220A
Insulated
power charger, T-tools etc.
JCT1240A provides insulation voltage rated at 2500V
RMS and JCT1240Z provides insulation voltage rated
1 2 3 TO-247
at 2000V RMS from all three terminals to external
A(2)
K(1)
heatsink. JCT1240A and JCT1240Z series comply
with UL standards (File ref: E252906).
G(3)
MAIN FEATURES
Symbol
VDRM/ VRRM
IT(RMS)
IGT
JCT1240
1200V
40A
35mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
Tstg
Operating junction temperature range
Repetitive peak off-state voltage(Tj=25)
Repetitive peak reverse voltage(Tj=25)
Tj
VDRM
VRRM
Non repetitive surge peak Off-state voltage
VDSM
Non repetitive peak reverse voltage
RMS on-state
current
TO-3P(Ins) (TC=80)
TO-220A(Ins) (TC=85)
TO-247 (TC=90)
VRSM
IT(RMS)
Value
-40-150
-40-125
1200
1200
VDRM +100
VRRM +100
40
Unit
V
V
V
V
A
TEL+86-513-83639777
- 1 / 5-
http://www.jjwdz.com



JCT1240
JCT1240 Series
JieJie Microelectronics CO. , Ltd
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
ITSM
I2t
dI/dt
IGM
460
1060
50
4
A
A2s
As
A
Average gate power dissipation
PG(AV)
1
W
Peak gate power
PGM 5 W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
IGT VD=12V RL=33Ω
VGT
VGD VD=VDRM Tj=125RL=3.3KΩ
- 15 35
- - 1.5
0.2 -
-
IL IG=1.2IGT
- - 150
IH IT=500mA
- - 75
dV/dt VD=2/3VDRM Gate Open Tj=1251000
-
-
Unit
mA
V
V
mA
mA
Vs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=80A tp=380μs
Tj=25
IDRM
IRRM
VD=VDRM VR=VRRM
Tj=25
Tj=125
Value(MAX)
1.6
10
4
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
TO-3P(Ins)
Rth(j-c) junction to case(AC)
TO-220A(Ins)
TO-247
Value
1.1
1.3
0.95
Unit
/W
TEL+86-513-83639777
- 2 / 5-
http://www.jjwdz.com







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