55A SCRs. JCT855CS Datasheet

JCT855CS SCRs. Datasheet pdf. Equivalent


Part JCT855CS
Description 55A SCRs
Feature JIEJIE MICROELECTRONICS CO. , Ltd JCT655/855 Series 55A SCRs Rev.3.0 DESCRIPTION: JCT655/855 seri.
Manufacture JIEJIE
Datasheet
Download JCT855CS Datasheet


JIEJIE MICROELECTRONICS CO. , Ltd JCT655/855 Series 55A SCR JCT855CS Datasheet
Recommendation Recommendation Datasheet JCT855CS Datasheet




JCT855CS
JIEJIE MICROELECTRONICS CO. , Ltd
JCT655/855 Series 55A SCRs
Rev.3.0
DESCRIPTION:
JCT655/855 series of silicon controlled rectifiers,
with high ability to withstand the shock loading of
large current, provide high dv/dt rate with strong
resistance to electromagnetic interference. They
are especially recommended for use on solid state
relay, motorcycle, power charger, T-tools etc.
JCTx55Z provides insulation voltage rated at 2500V
RMS from all three terminals to external heatsink
complying with UL standards (File ref: E252906).
1
23
TO-247
1
2 3 TO-247S
1 2 3 TO-3P
Insulated
A(2) K(1)
MAIN FEATURES
Symbol
VDRM/ VRRM
IT(RMS)
IGT
G(3)
JCT655
600V
55A
10 - 50 mA
JCT855
800V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage(Tj=25)
Repetitive peak reverse voltage(Tj=25)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
TO-3P(Ins)
RMS on-state current (TC=80)
TO-247S /TO-247
(TC=83)
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Symbol
Tstg
Tj
VDRM
VRRM
VDSM
VRSM
IT(RMS)
ITSM
I2t
TEL+86-513-83639777
- 1 / 5-
Value
-40-150
-40-125
600/800
600/800
VDRM +100
VRRM +100
55
Unit
V
V
V
V
A
520
1350
A
A2s
http://www.jjwdz.com



JCT855CS
JCT655/855 Series
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
Average gate power dissipation
Peak gate power
JieJie Microelectronics CO. , Ltd
dI/dt
150 As
IGM
PG(AV)
PGM
5
1
10
A
W
W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
IGT
VGT
VGD
IL
IH
dV/dt
VD=12V RL=33Ω
VD=VDRM Tj=125RL=3.3KΩ
IG=1.2IGT
IT=500mA
VD=2/3VDRM Gate Open Tj=125
10
-
0.2
-
-
700
15 50
- 1.5
--
- 100
- 80
--
Unit
mA
V
V
mA
mA
Vs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=80A tp=380μs
Tj=25
IDRM
IRRM
VD=VDRM VR=VRRM
Tj=25
Tj=125
Value(MAX)
1.6
10
6
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c) junction to case(AC)
TO-3P(Ins)
TO-247S /TO-247
Value
0.65
0.6
Unit
/W
TEL+86-513-83639777
- 2 / 5-
http://www.jjwdz.com







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