Trench IGBT. CI15T60 Datasheet

CI15T60 IGBT. Datasheet pdf. Equivalent


Part CI15T60
Description 15A 600V Field Stop Trench IGBT
Feature CI15T60 15A600V Field Stop Trench IGBT ■ Features • Positive temperature Co-efficient for easy para.
Manufacture CITC
Datasheet
Download CI15T60 Datasheet


CI15T60 15A600V Field Stop Trench IGBT ■ Features • Positiv CI15T60 Datasheet
Recommendation Recommendation Datasheet CI15T60 Datasheet




CI15T60
CI15T60
15A600V Field Stop Trench IGBT
Features
Positive temperature Co-efficient for easy parallel operation.
Short collector time-5us.
High current capability.
High input impedance.
Low saturation voltage : VCE(sat) = 1.65@25OC.
Fast switching : 20KHz ~ 40KHz(Ta = 25OC).
Suffix "G" indicates Halogen-free part, ex.CI15T60G.
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Outline
TO-220AB
0.420(10.66)
0.386(9.80)
0.226(5.75)MIN
0.155(3.94)
MAX
Marking code
GCE
0.054(1.37)
MAX
0.038(0.96)
0.020(0.50)
0.250(6.35)
MIN
0.197(5.0)MAX
0.055(1.40)
0.043(1.10)
0.624(15.87)MAX
0.115(2.92)
0.081(2.05)
0.500(12.70)MIN
G
0.110(2.80)
0.091(2.30)
0.028(0.70)
0.011(0.28)
Dimensions in inches and (millimeters)
Maximum ratings
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
C
E
Parameter
Marking code
Collector to Emitter Voltage
Collector Current
Pulsed collector current
RBSOA current
Diode Forward Current
Pulsed doide current
Gate to Emitter Voltage
Short collector time3
Power dissipation
Operating Junction Temperature
Storage Temperature Range
Note : 1.Test Standard to follow JESD-022.
2.Mark(*) is to estimate numerical value.
3.Test Cycle<1000Test Timing>1s.
Conditions
TC = 25OC
TC = 100OC
VCE < 600V, TJ < 150OC
TC = 25OC
TC = 100OC
TC = 125OC
TC = 100OC
Symbol
VCE
IC
ICpuls
ICpeak
IF
IFpuls
VGE
tSC
Ptot
TJ
TSTG
CI15T60
CI15T60
600
30
15
45*2
45*
20
10
30
±20
5
125*
65*
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
A
A
V
us
W
OC
OC
Document ID : DS-21I01
1 Revised Date : 2014/02/05
Revision : C3



CI15T60
CI15T60
15A600V Field Stop Trench IGBT
Thermal characteristics
PARAMETER
Thermal Resistance
Diode thermal resistance
Thermal Resistance
CONDITIONS
Junction to Case
chip case
Junction to Ambient
Symbol
RθJC
RθJCD
RθJA
MIN.
TYP. MAX.
0.75 1
1.4 1.9
62
UNIT
K/W
Electrical characteristics(AT TA=25oC unless otherwise noted)
On characteristivs
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Saturation Voltage
Diode forward voltage
Gate threshold voltage
Collector Cut-Off Current
G-E Leakage Current
Transconductance
CONDITIONS
VGE = 0V, IC = 0.2mA
VGE = 15V, IC = 15A
VGE = 0V, IF = 10A
IC = 0.21mA, VCE = VGE
VCE = 600V, VGE = 0V
VCE = 0V, VGE = 20V
VCE = 20V, IC = 15A
TJ = 25OC
TJ = 150OC
TJ = 25OC
TJ = 150OC
TJ = 25OC
TJ = 150OC
Symbol
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gFS
MIN. TYP. MAX.
600
1.65 1.9
1.93
1.75
1.40
4.4 5.25 6
40
1000
100
8.6
UNIT
V
uA
nA
S
Dynamic characteristivs
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Short Current
CONDITIONS
VCE = 25V
VGE = 0V
f = 1MHz
VCC = 480V, IC = 15A, VGE = 15V
VCC = 400V, VGE = 15V
Symbol
Ciss
Coss
Crss
QG
ISC
MIN. TYP. MAX.
1020
74
35
76
120
UNIT
pF
nC
A
Document ID : DS-21I01
2 Revised Date : 2014/02/05
Revision : C3







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