Trench IGBT. CI40T120P Datasheet

CI40T120P IGBT. Datasheet pdf. Equivalent


Part CI40T120P
Description 40A 1200V Field Stop Trench IGBT
Feature CI40T120P 40A1200V Field Stop Trench IGBT ■ Features • Positive temperature Co-efficient for easy p.
Manufacture CITC
Datasheet
Download CI40T120P Datasheet


CI40T120P 40A1200V Field Stop Trench IGBT ■ Features • Posi CI40T120P Datasheet
Recommendation Recommendation Datasheet CI40T120P Datasheet




CI40T120P
CI40T120P
40A1200V Field Stop Trench IGBT
Features
Positive temperature Co-efficient for easy parallel operation.
High current capability.
High input impedance.
Suffix "G" indicates Halogen-free part, ex.CI40T120PG.
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-3P molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 5.60 gram.
Outline
TO-3P
0.543(13.8)
0.528(13.4)
0.386(9.8)
0.370(9.4)
0.197(5.00)
0.181(4.60)
0.065(1.65)
0.057(1.45)
0.157(4.0)
0.142(3.6)
0.622(15.8)
0.606(15.4)
Marking code
Φ3.2±0.1
G
0.087(2.2)
0.071(1.8)
0.126(3.2)
0.110(2.8)
C
E
0.146(3.7)
0.130(3.3)
0.047(1.2)
0.031(0.8)
0.226(5.75)
0.203(5.15)
0.063(1.6)
0.047(1.2)
G
0.030(0.75)
0.020(0.5)
C
E
Dimensions in inches and (millimeters)
Maximum ratings
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Collector to Emitter Voltage
Collector Current
Pulsed collector current
RBSOA current
Diode Forward Current
Pulsed doide current
Gate to Emitter Voltage
Power dissipation
Operating Junction Temperature
Storage Temperature Range
Conditions
TC = 25OC
TC = 100OC
VCE < 1200V, TJ < 150OC
TC = 25OC
TC = 100OC
TC = 25OC
TC = 100OC
Symbol
VCE
IC
ICpuls
ICpeak
IF
IFpuls
VGE
Ptot
TJ
TSTG
CI40T120P
CI40T120P
1200
60
40
120
120
30
30
80
±20
208
83
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
A
A
V
W
OC
OC
Document ID : DS-21I02
1 Revised Date : 2014/02/05
Revision : C2



CI40T120P
CI40T120P
40A1200V Field Stop Trench IGBT
Thermal characteristics
PARAMETER
Thermal Resistance
Diode thermal resistance
Thermal Resistance
CONDITIONS
Junction to Case
chip case
Junction to Ambient
Symbol
RθJC
RθJCD
RθJA
MIN.
TYP. MAX.
0.6
3
40
UNIT
K/W
Electrical characteristics(AT TA=25oC unless otherwise noted)
On characteristivs
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Saturation Voltage
Diode forward voltage
Gate threshold voltage
Collector Cut-Off Current
G-E Leakage Current
Transconductance
CONDITIONS
VGE = 0V, IC = 0.5mA
VGE = 15V, IC = 40A
VGE = 0V, IF = 40A
IC = 1.5mA, VCE = VGE
VCE = 1200V, VGE = 0V
VCE = 0V, VGE = 20V
VCE = 20V, IC = 40A
TJ = 25OC
TJ = 150OC
TJ = 25OC
TJ = 150OC
TJ = 25OC
TJ = 150OC
Symbol
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gFS
MIN. TYP. MAX.
1200
2.1 2.3
2.4
3.1
3.4
4.5 5.5 6.5
400
4000
200
20
UNIT
V
uA
nA
S
Dynamic characteristivs
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
CONDITIONS
VCE = 25V
VGE = 0V
f = 1MHz
VCC = 750V, IC = 40A, VGE = 15V
Symbol
Ciss
Coss
Crss
QG
MIN.
TYP. MAX.
tbd
tbd
tbd
tbd
UNIT
pF
nC
Document ID : DS-21I02
2 Revised Date : 2014/02/05
Revision : C2







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