Trench IGBT. CIF25P120P Datasheet

CIF25P120P IGBT. Datasheet pdf. Equivalent


Part CIF25P120P
Description 25A 1200V Field Stop Trench IGBT
Feature CIF25P120P 25A 1200V Field Stop Trench IGBT ■Features • Positive temperature Co-efficient for easy pa.
Manufacture CITC
Datasheet
Download CIF25P120P Datasheet


CIF25P120P 25A 1200V Field Stop Trench IGBT ■Features • Pos CIF25P120P Datasheet
Recommendation Recommendation Datasheet CIF25P120P Datasheet




CIF25P120P
CIF25P120P
25A 1200V Field Stop Trench IGBT
Features
Positive temperature Co-efficient for easy parallel operation.
High current capability.
High input impedance.
Suffix "G" indicates Halogen-free part, ex.CIF25P120PG.
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-247 molded plastic body over
passivated chip.
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Polarity: Color band denotes cathode end .
Mounting Position : Any .
Weight : Approximated 5.60 gram .
Maximum ratings
Rating at 25 OC ambient temperature unless otherwise specified.
Outline
TO-247
Φ0.146(3.7)
MAX
0.626(15.9)
0.618(15.7)
0.201(5.10)
0.193(4.90)
0.083(2.1)
0.075(1.9)
Marking code
G
0.169(4.3)
MAX.
0.081(2.06)
0.077(1.96)
0.120(3.06)
0.117(2.96)
0.050(1.26)
0.046(1.16)
C
0.218(5.54)
0.210(5.34)
E
0.099(2.51)
0.091(2.31)
C
G
0.026(0.66)
0.023(0.59)
E
Dimensions in inches and (millimeters)
Parameter
Marking code
Collector to Emitter Voltage
Collector Current
Pulsed collector current
RBSOA current
Diode Forward Current
Pulsed doide current
Gate to Emitter Voltage
Power dissipation
Operating Junction Temperature
Storage Temperature Range
Note : 1.Test Standard to follow JESD-022.
2.Mark(*) is to estimate numerical value.
3.Test Cycle<1000Test Timing>1s.
Conditions
TC = 25 OC
TC = 100 OC
VCE < 1200V, T <J 150 OC
TC = 25 OC
TC = 100 OC
TC = 25 OC
TC = 100 OC
Symbol
V CE
IC
I Cpuls
I Cpeak
IF
I Fpuls
V GE
P tot
TJ
T STG
CIF25P120P
CIF25P120P
1200
50
25
75* 2
75*
30
15
40*
±20
298
119
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
A
A
V
W
OC
OC
Document ID : DS-21I04
1 Revised Date : 2016/05/05
Revision : C3



CIF25P120P
CIF25P120P
25A 1200V Field Stop Trench IGBT
Thermal characteristics
PARAMETER
Thermal Resistance
Diode thermal resistance
Thermal Resistance
CONDITIONS
Junction to Case
chip case
Junction to Ambient
Symbol
R θJC
R θJCD
R θJA
MIN.
TYP. MAX.
0.42
1.2
40
UNIT
K/W
Electrical characteristics(AT TA =25 oC unless otherwise noted)
On characteristivs
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Saturation Voltage
Diode forward voltage
Gate threshold voltage
Collector Cut-Off Current
G-E Leakage Current
Transconductance
CONDITIONS
VGE = 0V, I C = 1.5mA
VGE = 15V, I C = 25A
VGE = 0V, I F= 15A
IC = 1mA, V CE = VGE
VCE = 1200V, V GE = 0V
VCE = 0V, V GE = 20V
VCE = 20V, I C = 25A
TJ= 25 OC
TJ= 150 OC
TJ= 25 OC
TJ= 150 OC
TJ= 25 OC
TJ= 150 OC
Symbol
V (BR)CES
V CE(sat)
VF
V GE(th)
I CES
I GES
gFS
MIN.
1200
5.0
TYP. MAX.
2.25
2.6
1.87
1.5
6.1
10.5
2.4
7.0
0.1
2
100
UNIT
V
mA
nA
S
Dynamic characteristivs
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
CONDITIONS
VCE = 25V
VGE = 0V
f = 1MHz
VCC = 900V, I C = 25A, V GE = 15V
Symbol
C iss
C oss
C rss
QG
MIN.
TYP. MAX.
3480
99
55
tbd
UNIT
pF
nC
Document ID : DS-21I04
2 Revised Date : 2016/05/05
Revision : C3







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