Signal Diodes. MMBD1504A Datasheet

MMBD1504A Diodes. Datasheet pdf. Equivalent


Fairchild Semiconductor MMBD1504A
April 2016
MMBD1501A / MMBD1503A / MMBD1504A /
MMBD1505A
Small Signal Diodes
3
2
1
SOT-23
Connection Diagrams
1501A 3
3 1503A
1 2NC
1504A 3
12
3 1505A
12
12
Ordering Information
Part Number
MMBD1501A
MMBD1503A
MMBD1503A_D87Z
MMBD1504A
MMBD1505A
Top Mark
A11
A13
A13
A14
A15
Package
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel, 7 inch Reel, 3k pieces
Tape and Reel, 7 inch Reel, 3k pieces
Tape and Reel, 13 inch Reel, 10k pieces
Tape and Reel, 7 inch Reel, 3k pieces
Tape and Reel, 7 inch Reel, 3k pieces
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward Pulse Width = 1.0 second
Surge Current
Pulse Width = 1.0 microsecond
200
200
1.0
2.0
V
mA
A
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
-55 to +150
150
C
C
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1993 Fairchild Semiconductor Corporation
MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6
www.fairchildsemi.com


MMBD1504A Datasheet
Recommendation MMBD1504A Datasheet
Part MMBD1504A
Description Small Signal Diodes
Feature MMBD1504A; MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A — Small Signal Diodes April 2016 MMBD1501A / MMBD150.
Manufacture Fairchild Semiconductor
Datasheet
Download MMBD1504A Datasheet




Fairchild Semiconductor MMBD1504A
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RJA
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
VR Breakdown Voltage
VF Forward Voltage
IR Reverse Current
CT Total Capacitance
IR = 5.0 A
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
VR = 125 V
VR = 125 V, TA = 150°C
VR = 180 V
VR = 180 V, TA = 150°C
VR = 0, f = 1.0 MHz
Value
350
357
Unit
mW
C/W
Min.
200
620
720
800
830
0.87
0.90
Max.
720
830
890
930
1.10
1.15
1.0
3.0
10.0
5.0
4.0
Unit
V
mV
mV
mV
mV
V
V
nA
A
nA
A
pF
© 1993 Fairchild Semiconductor Corporation
MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6
2
www.fairchildsemi.com



Fairchild Semiconductor MMBD1504A
Typical Performance Characteristics
325
Ta= 25 oC
300
3
Ta= 25 oC
2
275 1
250
35
10
20 30 50
100
Reverse Current, I [A]
R
Figure 1. Reverse Voltage vs. Reverse Current
BV - 3.0 to 100 A
Ta= 25oC
550
500
450
400
350
1
23
5
10 20 30 50 100
Forward Current, I [A]
F
Figure 3. Forward Voltage vs. Forward Current
VF - 1 to 100 A
1.20
Ta= 25oC
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
10
20 30 50 100 200 300 500
Forward Current, I [mA]
F
Figure 5. Forward Voltage vs. Forward Current
VF - 10 to 800 mA
0
130 150 170 190 205
Reverse Voltage, V [V]
R
Figure 2. Reverse Current vs. Reverse Voltage
IR - 130 to 205 V
800
Ta= 25oC
750
700
650
600
550
500
0.1
0.2 0.3 0.5
1
23
5
10
Forward Current, I [mA]
F
Figure 4. Forward Voltage vs. Forward Current
VF - 0.1 to 10 mA
4.0
Ta= 25oC
3.5
3.0
2.5
2.0
1.5
1.0
0 2 4 6 8 10 12 14
Reverse Voltage [V]
Figure 6. Total Capacitance vs. Reverse Voltage
VR - 0 to 15 V
© 1993 Fairchild Semiconductor Corporation
MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6
3
www.fairchildsemi.com





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