BD677/A/679/A/681 BD678/A/680/A/682
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s s s
s
SGS-THOMSON PREFERRED S...
BD677/A/679/A/681 BD678/A/680/A/682
COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
s s s
s
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY
PNP -
NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATION s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base
NPN power
transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications The complementary
PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively. SOT-32
3
2
1
INTERNAL SCHEMATIC DIAGRAM
R 1 Typ.= 7K Ω
R 2 T yp.= 230 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature Max. O perating Junction Temperature
o
Value BD677/A BD678/A 60 60 BD679/A BD680/A 80 80 5 4 6 0.1 40 -65 to 150 150 BD681 BD682 100 100
Uni t
V V V A A A W
o o
C C
For
PNP types voltage and current values are negative.
September 1997
1/6
BD677/677A/678/678A/679/679A/680/680A/681/682
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC u...