Barrier Diode. CS10L100CT Datasheet

CS10L100CT Diode. Datasheet pdf. Equivalent


Part CS10L100CT
Description 10A Low Barrier Diode
Feature CS10L100CT 10A Low Barrier Diode ■ Features • Low forward voltage drop. • Excellent high temperatur.
Manufacture CITC
Datasheet
Download CS10L100CT Datasheet


CS10L100CT 10A Low Barrier Diode ■ Features • Low forward v CS10L100CT Datasheet
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CS10L100CT
CS10L100CT
10A Low Barrier Diode
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
EH
I
D
K
L
M
JN
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.398(10.1) 0.406(10.3)
0.236(6.0) 0.252(6.4)
0.579(14.7) 0.594(15.1)
0.543(13.8) 0.551(14.0)
0.143(3.63) 0.159(4.03)
0.104(2.64) 0.112(2.84)
0.335(8.5) 0.350(8.9)
0.046(1.17) 0.054(1.37)
0.028(0.71) 0.036(0.91)
0.098(2.49) 0.102(2.59)
0.176(4.47) 0.184(4.67)
0.046(1.17) 0.054(1.37)
0.102(2.6) 0.110(2.8)
0.019(0.28) 0.021(0.48)
0.147(3.74) 0.155(3.94)
ØP A
F
B
C
Marking code
G
123
EH
I
D
K
L
M
JN
Alternate
symbol Dimensions in inches(millimeters)
Min Max
A 0.394(10.0) 0.413(10.5)
B 0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E 0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I 0.029(0.75) 0.037(0.95)
J 0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L 0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Thermal resistance(1) (per diode)
Operating and Storage temperature
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
Junction to case
Symbol
VRRM
VRWM
VRM
IO
IFSM
IRRM
RθJC
TJ, TSTG
CS10L100CT
CS10L100CT
100
10
150
1
2
-65 ~ +175
UNIT
V
A
A
A
OC/W
OC
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
IF = 5A, TJ = 25OC
IF = 5A, TJ = 125OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
VF
IR
TYP.
560
MAX.
720
600
0.1
100
UNIT
mV
mA
Document ID : DS-11K6J
1 Revised Date : 2015/05/26
Revision : C4



CS10L100CT
Rating and characteristic curves
CS10L100CT
10A Low Barrier Diode
Fig.1 - Forward Current Derating Curve (per diode)
5
4
3
2
1 single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
10
TA=125°C
TA=100°C
TA=85°C
TA=25°C
TA=150°C
1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics (per diode)
100
TA=150OC
10
TA=125OC
TA=100OC
1 TA=85OC
0.1
0.01 10 20
TA=50OC
TA=25OC
40 60
Reverse Voltage,VR (V)
80
100
Document ID : DS-11K6J
2 Revised Date : 2015/05/26
Revision : C4







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