Power Rectifier. CS40S60CT Datasheet

CS40S60CT Rectifier. Datasheet pdf. Equivalent


Part CS40S60CT
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CS40S60CT Super Low Barrier High Voltage Power Rectifier M.
Manufacture CITC
Datasheet
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Chip Integration Technology Corporation CS40S60CT Super Low CS40S60CT Datasheet
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CS40S60CT
Chip Integration Technology Corporation
CS40S60CT
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x20A
60V
150OC
0.54V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
EH
I
D
K
L
M
JN
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.398(10.1) 0.406(10.3)
0.236(6.0) 0.252(6.4)
0.579(14.7) 0.594(15.1)
0.543(13.8) 0.551(14.0)
0.143(3.63) 0.159(4.03)
0.104(2.64) 0.112(2.84)
0.335(8.5) 0.350(8.9)
0.046(1.17) 0.054(1.37)
0.028(0.71) 0.036(0.91)
0.098(2.49) 0.102(2.59)
0.176(4.47) 0.184(4.67)
0.046(1.17) 0.054(1.37)
0.102(2.6) 0.110(2.8)
0.019(0.28) 0.021(0.48)
0.147(3.74) 0.155(3.94)
ØP A
F
B
C
Marking code
G
123
EH
I
D
K
L
M
JN
Alternate
symbol Dimensions in inches(millimeters)
Min Max
A 0.394(10.0) 0.413(10.5)
B 0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E 0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I 0.029(0.75) 0.037(0.95)
J 0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L 0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Thermal resistance(1)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Junction to case
VRRM
VRWM
VRM
IO
IFSM
RθJC
TJ, TSTG
CS40S60CT
CS40S60CT
60
40
280
4
-55 ~ +150
UNIT
V
A
A
OC/W
OC
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
IF = 20A, TJ = 25OC
IF = 20A, TJ = 125OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
VF
IR
TYP.
550
540
0.07
15
MAX.
600
570
0.5
100
UNIT
mV
mA
Document ID : DS-11K5E
1 Revised Date : 2015/08/04
Revision : C6



CS40S60CT
Chip Integration Technology Corporation
CS40S60CT
Super Low Barrier High Voltage Power Rectifier
Rating and characteristic curves
Fig. 1 - Instantaneous Forward
Characteristics (per diode)
100
TA=150°C
10 TA=125°C
TA=100°C
TA=75°C
TA=25°C
1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage,VF (Volts)
Fig.2 - Total Capacitance vs. Reverse Voltage (per diode)
100
f = 1.0MHz
10
1
0 5 10 15 20 25 30 35 40
DC Reverse Voltage,VR (V)
Fig. 3 - Reverse Characteristics (per diode)
1000
100
10
1
0.1
0.015 10
TA=150OC
TA=125OC
TA=100OC
TA=75OC
TA=50OC
TA=25OC
20 30 40
Reverse Voltage,VR (V)
50
60
Fig.4 - Forward Current Derating Curve(total device)
30
20
10
single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Document ID : DS-11K5E
2 Revised Date : 2015/08/04
Revision : C6







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