Power Rectifier. CSF20S100CT Datasheet

CSF20S100CT Rectifier. Datasheet pdf. Equivalent


Part CSF20S100CT
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CSF20S100CT Super Low Barrier High Voltage Power Rectifier .
Manufacture CITC
Datasheet
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CSF20S100CT
Chip Integration Technology Corporation
CSF20S100CT
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
Features
2x10A
100V
150OC
0.57V
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSF20S100CTG.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC ITO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
ITO-220AB
ØP
B
A
K
L
F
C
Marking code
123
E
D
G
H
I
M
JN
ØP A
B
K
L
F
C
Marking code
123
E
D
G
H
I
M
PIN 1
PIN 3
JN
PIN 2
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.390(9.9) 0.408(10.36)
0.268(6.8) 0.283(7.2)
0.583(14.8) 0.598(15.2)
0.512(13.0) 0.543(13.8)
0.102(2.6) 0.150(3.8)
0.101(2.55) 0.112(2.85)
0.043(1.1) 0.053(1.35)
0.043(1.1) 0.053(1.35)
0.020(0.5) 0.028(0.7)
0.098(2.49) 0.102(2.59)
0.169(4.3) 0.185(4.7)
0.112(2.85) 0.128(3.25)
0.098(2.5) 0.114(2.9)
0.020(0.5) 0.028(0.7)
0.130(3.3) 0.134(3.5)
Alternate
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.383(9.72) 0.404(10.27)
0.248(6.3) 0.272(6.9)
0.571(14.5) 0.610(15.5)
0.516(13.1) 0.547(13.9)
- 0.161(4.1)
0.094(2.4) 0.126(3.2)
0.039(1.0) 0.051(1.3)
0.039(1.0) 0.051(1.3)
0.020(0.5) 0.035(0.9)
0.095(2.41) 0.105(2.67)
0.169(4.3) 0.189(4.8)
0.055(1.4) 0.122(3.1)
0.091(2.3) 0.117(2.96)
0.014(0.35) 0.031(0.8)
0.122(3.1) 0.142(3.6)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Thermal resistance(1) (per diode)
Operating and Storage temperature
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
Junction to case
Symbol
VRRM
VRWM
VRM
IO
IFSM
IRRM
RθJC
TJ, TSTG
CSF20S100CT
CSF20S100CT
100
20
200
3
4
-55 ~ +150
UNIT
V
A
A
A
OC/W
OC
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
IF = 20A, TJ = 25OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
VF
IR
TYP.
570
MAX.
700
630
820
0.5
25
UNIT
mV
mA
Document ID : DS-11K4Y
1 Revised Date : 2015/08/04
Revision : C8



CSF20S100CT
Chip Integration Technology Corporation
Rating and characteristic curves
CSF20S100CT
Super Low Barrier High Voltage Power Rectifier
Fig. 1 - Forward Power Dissipation (per diode)
10
8
TA=150°C
6
4
2
0
0
5
10 15
20
Average Forward Current,IF(AV) (A)
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
100
10
TA=150°C
TA=125°C
1
TA=100°C
TA=75°C
0.1
TA=25°C
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics (per diode)
100
10
1
0.1
0.01
0.001
0
TA=150OC
TA=125OC
TA=100OC
TA=75OC
TA=25OC
20 40 60 80
Reverse Voltage,VR (V)
100
Fig.4 - Forward Current Derating Curve (total device)
20
16
12
8
4 single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150 175
Ambient Temperature,TA ( OC)
Document ID : DS-11K4Y
2 Revised Date : 2015/08/04
Revision : C8







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