Schottky Rectifier. CSF30S60CT-A Datasheet

CSF30S60CT-A Rectifier. Datasheet pdf. Equivalent


Part CSF30S60CT-A
Description 30A MOS Schottky Rectifier
Feature Chip Integration Technology Corporation CSF30S60CT-A 30A MOS Schottky Rectifier Main Product Chara.
Manufacture CITC
Datasheet
Download CSF30S60CT-A Datasheet


Chip Integration Technology Corporation CSF30S60CT-A 30A MO CSF30S60CT-A Datasheet
Recommendation Recommendation Datasheet CSF30S60CT-A Datasheet




CSF30S60CT-A
Chip Integration Technology Corporation
CSF30S60CT-A
30A MOS Schottky Rectifier
Main Product Characteristics
IF(AV)
VRWM
TJ
VF(Typ)
2 X 15A
60V
150OC
0.50V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Lead free in compliance with EU RoHS.
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC ITO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Weight : Approximated 2.25 gram.
Outline
ITO-220AB
ØP
A
B
C
Marking code
K
L
F
E
D
GM
H
I
JN
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.390(9.9) 0.408(10.36)
0.268(6.8) 0.283(7.2)
0.583(14.8) 0.598(15.2)
0.512(13.0) 0.543(13.8)
0.102(2.6) 0.150(3.8)
0.101(2.55) 0.112(2.85)
0.043(1.1) 0.053(1.35)
0.043(1.1) 0.053(1.35)
0.020(0.5) 0.028(0.7)
0.098(2.49) 0.102(2.59)
0.169(4.3) 0.185(4.7)
0.112(2.85) 0.128(3.25)
0.098(2.5) 0.114(2.9)
0.020(0.5) 0.028(0.7)
0.130(3.3) 0.134(3.5)
ØP A
B
C
Marking code
K
L
F
E
D
GM
H
I
JN
Alternate
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.383(9.72) 0.404(10.27)
0.248(6.3) 0.272(6.9)
0.571(14.5) 0.610(15.5)
0.516(13.1) 0.547(13.9)
- 0.161(4.1)
0.094(2.4) 0.126(3.2)
0.039(1.0) 0.051(1.3)
0.039(1.0) 0.051(1.3)
0.020(0.5) 0.035(0.9)
0.095(2.41) 0.105(2.67)
0.169(4.3) 0.189(4.8)
0.055(1.4) 0.122(3.1)
0.091(2.3) 0.117(2.96)
0.014(0.35) 0.031(0.8)
0.122(3.1) 0.142(3.6)
Dimensions in inches and (millimeters)
Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified.
Circuit Diagram
Parameter
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Typical Thermal resistance(per diode)
Storage temperature
Operating Junction temperature
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Symbol
VRWM
IO
IFSM
2us - 1kHz
IRRM
Junction to case
Junction to Ambient
RθJC
RθJA
TSTG
TJ
CSF30S60CT-A
60
30
300
2
8
50
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
OC/W
OC/W
OC
OC
Parameter
Forward voltage drop (per diode)
Reverse current (per diode)
Reverse Breakdown Voltage (per diode)
Conditions
IF = 3A, TJ = 25OC
IF = 15A, TJ = 25OC
IF = 15A, TJ = 125OC
VR = 60V, TJ = 25OC
VR = 60V, TJ = 125OC
IR = 0.5mA, TJ = 25OC
Symbol MIN.
VF
IR
VBR 60
TYP.
340
510
500
0.08
30
MAX.
560
0.5
50
UNIT
mV
mA
V
Document ID : DS-11K057
Revised Date : 2017/08/22
1 Revision : C



CSF30S60CT-A
Chip Integration Technology Corporation
CSF30S60CT-A
30A MOS Schottky Rectifier
Rating and characteristic curves
Fig. 1 - Forward Characteristics
100
10
1
0.1
0.01
0
TA = 125oC
TA = 100oC
TA = 75oC
TA = 50oC
TA = 25oC
Per diode
100 200 300 400
Instantaneous Forward Voltage, VF (mV)
500
Fig. 2 - Reverse Characteristics
100
TA = 125oC
10 TA = 100oC
TA = 75oC
1
TA = 50oC
0.1
0.01
0
TA = 25oC
Per diode
10 20 30 40 50 60
Reverse Voltage, VR (V)
Fig. 3 - Forward Power Dissipation
9
8
7
6
5
4
3
2
1
0
0
Per diode
5 10 15
Average Forward Current, IF (A)
20
Fig. 4 - Forward Current Derating Curve
18
15
12
9
6
3
0
0
Per diode
25 50 75 100
Case Temperature, TC (oC)
125
150
10000
Fig. 5 - Junction Capacitance
1000
100
10
1
1
Per diode
10
Reverse Voltage, VR (V)
100
2
Document ID : DS-11K057
Revised Date : 2017/08/22
Revision : C







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)