Schottky Rectifier. CSF40S45PT Datasheet

CSF40S45PT Rectifier. Datasheet pdf. Equivalent


Part CSF40S45PT
Description 40A MOS Schottky Rectifier
Feature Chip Integration Technology Corporation CSF40S45PT 40A MOS Schottky Rectifier Main Product Characte.
Manufacture CITC
Datasheet
Download CSF40S45PT Datasheet


Chip Integration Technology Corporation CSF40S45PT 40A MOS CSF40S45PT Datasheet
Recommendation Recommendation Datasheet CSF40S45PT Datasheet




CSF40S45PT
Chip Integration Technology Corporation
CSF40S45PT
40A MOS Schottky Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
VF(Typ)
Features
2 X 20A
45V
150OC
0.41V
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead free in compliance with EU RoHS.
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-247 molded plastic body over
passivated chip.
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Weight : Approximated 5.60 gram.
Outline
TO-247
Φ0.150(3.8)
MAX
0.640(16.25)
MAX.
Marking code
123
0.177(4.5)
MAX.
0.094(2.4)
0.071(1.8)
0.126(3.2)
0.110(2.8)
0.055(1.4)
0.039(1.0)
0.222(5.65)
0.207(5.25)
0.209(5.30)
0.165(4.20)
0.083(2.1)
0.075(1.9)
0.118(3.0)
0.087(2.2)
0.033(0.85)
0.018(0.45)
Maximum Ratings
Rating at 25OC ambient temperature unless otherwise specified.
Circuit Diagram
PIN 1
PIN 3
PIN 2
Parameter
Working peak reverse voltage
Condition
Symbol
V RWM
Forward Rectified Current (total device)
Forward Surge Current (per diode)
8.3ms single half sine-wave
superimposed on rate load (JEDEC method)
Peak Repetitive Reverse Surge Current (per diode)
Pulse width 2us, 1000Hz, square wave
at TA 25oC,10 cycles
Thermal Resistance (per diode)
Junction to case
Junction to ambient
Storage Temperature
Operating Junction Temperature
IO
IFSM
IRRM
RθJC
RθJA
TSTG
TJ
Electrical Characteristics
Rating at 25OC ambient temperature unless otherwise specified.
CSF40S45PT
45
40
340
2
2
50
-55 ~ +150
-55 ~ +150
Parameter
Forward Voltage Drop (per diode)
Reverse Current (per diode)
Reverse Breakdown Voltage (per diode)
Condition
IF = 3A, TJ = 25OC
IF = 20A, TJ = 25OC
IF = 20A, TJ = 125OC
VR = 45V , TJ = 25OC
VR = 45V , TJ = 125OC
IR = 0.5mA, TJ = 25OC
Symbol MIN.
VF
IR
VBR 45
TYP.
310
445
410
0.1
50
MAX.
500
0.5
100
UNIT
V
A
A
A
OC/W
OC
OC
UNIT
mV
mA
V
Document ID : DS-11K045
Revised Date : 2017/04/05
1 Revision : C



CSF40S45PT
Chip Integration Technology Corporation
CSF40S45PT
40A MOS Schottky Rectifier
Rating and Characteristic Curves
Fig. 1 - Forward Characteristics
100
Fig. 2 - Reverse Characteristics
100
10
TA = 125oC
1 TA = 100oC
0.1
TA = 75oC
TA = 50oC
TA = 25oC
0.01
0
Per diode
100 200 300 400
Instantaneous Forward Voltage, VF (mV)
500
10
1
0.1
0.01
0
TA = 125oC
TA = 100oC
TA = 75oC
TA = 50oC
TA = 25oC
Per diode
10 20 30 40
Reverse Voltage, VR (V)
50
Fig. 3 - Forward Power Dissipation
9
8
7
6
5
4
3
2
1
0
0
Per diode
5 10 15 20
Average Forward Current, IF (A)
25
Fig. 4 - Forward Current Derating Curve
25
20
15
10
5
0
0
Per diode
25 50 75 100
Case Temperature, TC (oC)
125
150
10000
Fig. 5 - Junction Capacitance
1000
100
10
1
0
Per diode
5 10 15 20
Reverse Voltage, VR (V)
25
2
Document ID : DS-11K045
Revised Date : 2017/04/05
Revision : C







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