Schottky Rectifier. CS40S45CT-A Datasheet

CS40S45CT-A Rectifier. Datasheet pdf. Equivalent


Part CS40S45CT-A
Description 40A MOS Schottky Rectifier
Feature Chip Integration Technology Corporation CS40S45CT-A 40A MOS Schottky Rectifier Main Product Charact.
Manufacture CITC
Datasheet
Download CS40S45CT-A Datasheet


Chip Integration Technology Corporation CS40S45CT-A 40A MOS CS40S45CT-A Datasheet
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CS40S45CT-A
Chip Integration Technology Corporation
CS40S45CT-A
40A MOS Schottky Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
VF(Typ)
2 X 20A
45V
125OC
0.425V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Lead free in compliance with EU RoHS.
Mechanical Data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body .
Terminals : Solder plated, solderable per
MIL-STD-750, Method 202. 6
Polarity: As marked.
Weight : Approximated 2.25 gram.
Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
EH
DI
K
L
M
JN
ØP A
F
B
C
Marking code
G
123
EH
DI
K
L
M
JN
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.398(10.1) 0.406(10.3)
0.236(6.0) 0.252(6.4)
0.579(14.7) 0.594(15.1)
0.543(13.8) 0.551(14.0)
0.143(3.63) 0.159(4.03)
0.104(2.64) 0.112(2.84)
0.335(8.5) 0.350(8.9)
0.046(1.17) 0.054(1.37)
0.028(0.71) 0.036(0.91)
0.098(2.49) 0.102(2.59)
0.176(4.47) 0.184(4.67)
0.046(1.17) 0.054(1.37)
0.102(2.6) 0.110(2.8)
0.019(0.28) 0.021(0.48)
0.147(3.74) 0.155(3.94)
Alternate
symbol Dimensions in inches(millimeters)
Min Max
A 0.394(10.0) 0.413(10.5)
B 0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E 0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I 0.029(0.75) 0.037(0.95)
J 0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L 0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
Dimensions in inches and (millimeters)
Maximum Ratings
Rating at 25OC ambient temperature unless otherwise specified.
Circuit Diagram
Parameter
Working peak reverse voltage
Forward Rectified Current (total device)
Forward Surge Current (per diode)
Condition
Symbol
V RWM
8.3ms single half sine-wave
superimposed on rate load (JEDEC method)
IO
IFSM
Peak Repetitive Reverse Surge Current (per diode) 2us - 1kHz
IRRM
CS40S45CT-A
45
40
280
2
UNIT
V
A
A
A
Thermal Resistance (per diode)
Storage Temperature
Operating Junction Temperature
Junction to case
Junction to ambient
Electrical Characteristics
Rating at 25OC ambient temperature unless otherwise specified.
Parameter
Forward Voltage Drop (per diode)
Reverse Current (per diode)
Reverse Breakdown Voltage (per diode)
Condition
IF = 3A, TJ = 25OC
IF = 20A, TJ = 25OC
IF = 20A, TJ = 125OC
VR = 45V , TJ = 25OC
VR = 45V , TJ = 125OC
IR = 0.5mA, TJ = 25OC
RθJC
RθJA
TSTG
TJ
2
50
-55 ~ +150
-55 ~ +125
OC/W
OC
OC
Symbol MIN.
VF
IR
VBR 45
TYP.
315
455
425
0.12
38
MAX.
490
0.5
100
UNIT
mV
mA
V
Document ID : DS-11K030
Revised Date : 2016/10/04
1 Revision : C



CS40S45CT-A
Chip Integration Technology Corporation
CS40S45CT-A
40A MOS Schottky Rectifier
Rating and Characteristic Curves
Fig. 1 - Forward Characteristics
100
10
TA = 125oC
1 TA = 100oC
0.1
TA = 75oC
TA = 50oC
TA = 25oC
Fig. 2 - Reverse Characteristics
100
TA = 125oC
TA = 100oC
10
TA = 75oC
1
TA = 50oC
0.1 TA = 25oC
0.01
0
Per diode
100 200 300 400
Instantaneous Forward Voltage, VF (mV)
500
Fig. 3 - Forward Power Dissipation
9
8
7
6
5
4
3
2
1
0
0
Per diode
5 10 15 20
Average Forward Current, IF (A)
25
0.01
0
Per diode
10 20 30 40
Reverse Voltage, VR (V)
50
Fig. 4 - Forward Current Derating Curve
25
20
15
10
5
0
0
Per diode
25 50 75 100
Case Temperature, TC (oC)
125
150
10000
Fig. 5 - Junction Capacitance
1000
100
10
1
0
Per diode
5 10 15 20
Reverse Voltage, VR (V)
25
2
Document ID : DS-11K030
Revised Date : 2016/10/04
Revision : C





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