Barrier Diode. CSF20L200CT-A Datasheet

CSF20L200CT-A Diode. Datasheet pdf. Equivalent


Part CSF20L200CT-A
Description Low Barrier Diode
Feature CSF20L200CT-A 20A Low Barrier Diode ■ Features • Low forward voltage drop. • Excellent high tempera.
Manufacture CITC
Datasheet
Download CSF20L200CT-A Datasheet


CSF20L200CT-A 20A Low Barrier Diode ■ Features • Low forwar CSF20L200CT-A Datasheet
Recommendation Recommendation Datasheet CSF20L200CT-A Datasheet




CSF20L200CT-A
CSF20L200CT-A
20A Low Barrier Diode
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSF20L200CTG-A.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC ITO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
ITO-220AB
ØP
B
A
K
L
F
C
Marking code
123
E
D
G
H
I
M
JN
ØP A
B
K
L
F
C
Marking code
123
E
D
G
H
I
M
PIN 1
PIN 3
JN
PIN 2
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.390(9.9) 0.408(10.36)
0.268(6.8) 0.283(7.2)
0.583(14.8) 0.598(15.2)
0.512(13.0) 0.543(13.8)
0.102(2.6) 0.150(3.8)
0.101(2.55) 0.112(2.85)
0.043(1.1) 0.053(1.35)
0.043(1.1) 0.053(1.35)
0.020(0.5) 0.028(0.7)
0.098(2.49) 0.102(2.59)
0.169(4.3) 0.185(4.7)
0.112(2.85) 0.128(3.25)
0.098(2.5) 0.114(2.9)
0.020(0.5) 0.028(0.7)
0.130(3.3) 0.134(3.5)
Alternate
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.383(9.72) 0.404(10.27)
0.248(6.3) 0.272(6.9)
0.571(14.5) 0.610(15.5)
0.516(13.1) 0.547(13.9)
- 0.161(4.1)
0.094(2.4) 0.126(3.2)
0.039(1.0) 0.051(1.3)
0.039(1.0) 0.051(1.3)
0.020(0.5) 0.035(0.9)
0.095(2.41) 0.105(2.67)
0.169(4.3) 0.189(4.8)
0.055(1.4) 0.122(3.1)
0.091(2.3) 0.117(2.96)
0.014(0.35) 0.031(0.8)
0.122(3.1) 0.142(3.6)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Thermal resistance(1) (per diode)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VRRM
VRWM
VRM
IO
IFSM
2us - 1kHz
IRRM
Junction to case
RθJC
TJ, TSTG
CSF20L200CT-A
CSF20L200CT
200
20
250
3
4
-65 ~ +175
UNIT
V
A
A
A
OC/W
OC
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
IF = 20A, TJ = 25OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Reverse recovery time (per diode)
IF = 0.5A, IR = 1A, IRR = 0.25A
IF = 1A, VR = 30V, di/dt = 100A/us, TJ = 25OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
1
Symbol MIN.
VF
IR
trr
TYP.
660
24
20
MAX.
860
720
960
0.1
10
30
25
UNIT
mV
mA
ns
Document ID : DS-11KAL
Revised Date : 2015/05/25
Revision : C6



CSF20L200CT-A
Rating and characteristic curves
CSF20L200CT-A
20A Low Barrier Diode
Fig. 1 - Forward Power Dissipation (per diode)
9
7
TA=175OC
5
3
1
0
0 5 10
Average Forward Current,IF(AV) (A)
15
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
100
10
TA=150°C
TA=125°C
1
TA=100°C
0.1 TA=75°C
TA=50°C
TA=25°C
0.01
0
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics (per diode)
100
10
1
0.1
0.01
0
TA=150OC
TA=125OC
TA=100OC
TA=75OC
TA=50OC
TA=25OC
50 100 150
Reverse Voltage,VR (V)
200
Fig.4 - Forward Current Derating Curve (total device)
20
16
12
8
4 single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Document ID : DS-11KAL
2 Revised Date : 2015/05/25
Revision : C6







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