Barrier Diode. CSF20L60CT-A Datasheet

CSF20L60CT-A Diode. Datasheet pdf. Equivalent


Part CSF20L60CT-A
Description Low Barrier Diode
Feature CSF20L60CT-A 20A Low Barrier Diode ■ Features • Low forward voltage drop. • Excellent high temperat.
Manufacture CITC
Datasheet
Download CSF20L60CT-A Datasheet


CSF20L60CT-A 20A Low Barrier Diode ■ Features • Low forward CSF20L60CT-A Datasheet
Recommendation Recommendation Datasheet CSF20L60CT-A Datasheet




CSF20L60CT-A
CSF20L60CT-A
20A Low Barrier Diode
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSF20L60CTG-A.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC ITO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
ITO-220AB
ØP
B
A
K
L
F
C
Marking code
123
E
D
G
H
I
M
JN
ØP A
B
K
L
F
C
Marking code
123
E
D
G
H
I
M
PIN 1
PIN 3
JN
PIN 2
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.390(9.9) 0.408(10.36)
0.268(6.8) 0.283(7.2)
0.583(14.8) 0.598(15.2)
0.512(13.0) 0.543(13.8)
0.102(2.6) 0.150(3.8)
0.101(2.55) 0.112(2.85)
0.043(1.1) 0.053(1.35)
0.043(1.1) 0.053(1.35)
0.020(0.5) 0.028(0.7)
0.098(2.49) 0.102(2.59)
0.169(4.3) 0.185(4.7)
0.112(2.85) 0.128(3.25)
0.098(2.5) 0.114(2.9)
0.020(0.5) 0.028(0.7)
0.130(3.3) 0.134(3.5)
Alternate
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.383(9.72) 0.404(10.27)
0.248(6.3) 0.272(6.9)
0.571(14.5) 0.610(15.5)
0.516(13.1) 0.547(13.9)
- 0.161(4.1)
0.094(2.4) 0.126(3.2)
0.039(1.0) 0.051(1.3)
0.039(1.0) 0.051(1.3)
0.020(0.5) 0.035(0.9)
0.095(2.41) 0.105(2.67)
0.169(4.3) 0.189(4.8)
0.055(1.4) 0.122(3.1)
0.091(2.3) 0.117(2.96)
0.014(0.35) 0.031(0.8)
0.122(3.1) 0.142(3.6)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Repetitive peak avalanche energy
(per diode)
Thermal resistance(1) (per diode)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
VRRM
VRWM
VRM
IO
IFSM
IRRM
1us, 25OC
Junction to case
PARM
RθJC
TJ, TSTG
CSF20L60CT-A
CSF20L60CT
60
20
250
3
7000
4
-65 ~ +150
UNIT
V
A
A
A
W
OC/W
OC
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
IF = 20A, TJ = 25OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
VF
IR
TYP.
MAX.
650
560
790
0.5
100
UNIT
mV
mA
Document ID : DS-11KA5
1 Revised Date : 2015/05/25
Revision : C6



CSF20L60CT-A
CSF20L60CT-A
20A Low Barrier Diode
Rating and characteristic curves
Fig. 1 - Instantaneous Forward
Characteristics (per diode)
100
10
TA=150°C
TA=125°C
1
TA=100°C
TA=85°C
TA=50°C
0.1
TA=25°C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics (per diode)
100
TA=150OC
10 TA=125OC
TA=100OC
1 TA=85OC
0.1 TA=50OC
0.01
0
10 20 30 40
Reverse Voltage,VR (V)
TA=25OC
50 60
10000
Fig. 5 - Total Capacitance VS.
Reverse Voltage
f = 1MHz
1000
Fig.2 - Forward Current Derating Curve
30
RθJA = RθJC
Total Device
20
RθJA = RθJC
Per Element
10
RθJA = 16OC/W
Per Element
25 50 75 100 125 150
Ambient Temperature,TA ( OC)
Fig. 4 - Maximum Avalanche Power Curve
100000
10000
1000
100
10
1
0.01
0.1 1
10 100
Pulse Duration,TP (us)
1000
100
10
0 10 20 30 40 50 60
Reverse Voltage,VR (V)
2
Document ID : DS-11KA5
Revised Date : 2015/05/25
Revision : C6







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