Power Rectifier. CSF10L60CT-A Datasheet

CSF10L60CT-A Rectifier. Datasheet pdf. Equivalent


Part CSF10L60CT-A
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CSF10L60CT-A Super Low Barrier High Voltage Power Rectifier.
Manufacture CITC
Datasheet
Download CSF10L60CT-A Datasheet


Chip Integration Technology Corporation CSF10L60CT-A Super CSF10L60CT-A Datasheet
Recommendation Recommendation Datasheet CSF10L60CT-A Datasheet




CSF10L60CT-A
Chip Integration Technology Corporation
CSF10L60CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x5A
60V
150OC
0.43V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSF10L60CTG-A.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC ITO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Outline
ITO-220AB
ØP
B
A
K
L
F
C
Marking code
123
E
D
G
H
I
M
JN
ØP A
B
K
L
F
C
Marking code
123
E
D
G
H
I
M
PIN 1
PIN 3
JN
PIN 2
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.390(9.9) 0.408(10.36)
0.268(6.8) 0.283(7.2)
0.583(14.8) 0.598(15.2)
0.512(13.0) 0.543(13.8)
0.102(2.6) 0.150(3.8)
0.101(2.55) 0.112(2.85)
0.043(1.1) 0.053(1.35)
0.043(1.1) 0.053(1.35)
0.020(0.5) 0.028(0.7)
0.098(2.49) 0.102(2.59)
0.169(4.3) 0.185(4.7)
0.112(2.85) 0.128(3.25)
0.098(2.5) 0.114(2.9)
0.020(0.5) 0.028(0.7)
0.130(3.3) 0.134(3.5)
Alternate
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.383(9.72) 0.404(10.27)
0.248(6.3) 0.272(6.9)
0.571(14.5) 0.610(15.5)
0.516(13.1) 0.547(13.9)
- 0.161(4.1)
0.094(2.4) 0.126(3.2)
0.039(1.0) 0.051(1.3)
0.039(1.0) 0.051(1.3)
0.020(0.5) 0.035(0.9)
0.095(2.41) 0.105(2.67)
0.169(4.3) 0.189(4.8)
0.055(1.4) 0.122(3.1)
0.091(2.3) 0.117(2.96)
0.014(0.35) 0.031(0.8)
0.122(3.1) 0.142(3.6)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Thermal resistance(1)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Junction to case
VRRM
VRWM
VRM
IO
IFSM
RθJC
TJ, TSTG
CSF10L60CT-A
CSF10L60CT
60
10
200
15
-55 ~ +150
UNIT
V
A
A
OC/W
OC
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
IF = 5A, TJ = 25OC
IF = 5A, TJ = 125OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
VF
IR
TYP.
430
MAX.
520
470
0.5
100
UNIT
mV
mA
Document ID : DS-11KAM
1 Revised Date : 2015/08/10
Revision : C7



CSF10L60CT-A
Chip Integration Technology Corporation
CSF10L60CT-A
Super Low Barrier High Voltage Power Rectifier
Rating and characteristic curves
Fig.1 - Forward Current Derating Curve (per diode)
6
4
2
single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
100
10
TA=150°C
1
TA=125°C
TA=100°C
0.1
TA=75°C
TA=25°C
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics (per diode)
1000
100
10
1
0.1
0.01 0
TA=150OC
TA=125OC
TA=100OC
TA=75OC
TA=25OC
10 20 30 40 50 60
Reverse Voltage,VR (V)
Document ID : DS-11KAM
2 Revised Date : 2015/08/10
Revision : C7







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)