Power Rectifier. CSB20S45CT-A Datasheet

CSB20S45CT-A Rectifier. Datasheet pdf. Equivalent


Part CSB20S45CT-A
Description Super Low Barrier High Voltage Power Rectifier
Feature Chip Integration Technology Corporation CSB20S45CT-A Super Low Barrier High Voltage Power Rectifier.
Manufacture CITC
Datasheet
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CSB20S45CT-A
Chip Integration Technology Corporation
CSB20S45CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x10A
45V
150OC
0.36V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CSΒ20S45CTG-A.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body over
passivated chip.
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Polarity: Color band denotes cathode end.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Outline
D2PAK(TO-263)
0.055(1.40)
0.031(0.80)
0.411(10.45)
0.380(9.65)
0.245(6.22)
MIN
0.370(9.40)
0.320(8.13)
0.228(5.80)
0.173(4.40)
2
Marking code
13
0.063(1.60)
0.024(0.60)
0.205(5.20)
0.189(4.80)
PIN 1
PIN 3
PIN 2
0.190(4.83)
0.160(4.06)
0.055(1.40)
0.045(1.14)
0~0.012(0~0.30)
0.116(2.95)
0.093(2.35)
0.024(0.60)
0.011(0.28)
Dimensions in inches and (millimeters)
Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified.
Circuit Diagram
Parameter
Marking code
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Thermal resistance(1)
Storage temperature
Operating Junction temperature
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
Junction to case
Symbol
VRWM
IO
IFSM
IRRM
RθJC
TSTG
TJ
CSB20S45CT-A
CSB20S45CT
45
20
200
3
4
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
OC/W
OC
OC
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
IF = 20A, TJ = 25OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
VF
IR
TYP.
360
MAX.
470
440
600
0.5
100
UNIT
mV
mA
Document ID : DS-11KDZ
Revised Date : 2017/10/13
1 Revision : C3



CSB20S45CT-A
Chip Integration Technology Corporation
Rating and characteristic curves
CSB20S45CT-A
Super Low Barrier High Voltage Power Rectifier
Fig.1 - Forward Current Derating Curve (total device)
15
10
5
single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150 175
Case Temperature,TC ( OC)
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
100
10 TA=150°C
TA=125°C
1
0.1
TA=100°C
TA=75°C
TA=25°C
0.01
0
0.1 0.2 0.3 0.4 0.5
Instantaneous Forward Voltage (Volts)
Fig. 3 - Reverse Characteristics (per diode)
1000
100
10
1
0.1
0.01
0
T
=
A
1
5
0O
C
TA=125OC
TA=100OC
TA=75OC
TA=25OC
10 20 30 40
Reverse Voltage (V)
50
Document ID : DS-11KDZ
Revised Date : 2017/10/13
2 Revision : C3







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